BAT 49
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
August 1999 Ed : 1A
DO 41
(Glass)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
80
V
I
F
Forward Continuous Current*
T
a
= 70
C
500
mA
I
FRM
Repetitive Peak Forward Current*
t
p
= 1s
0.5
3
A
I
FSM
Surge non Repetitive Forward Current*
t
p
10ms
10
A
T
stg
T
j
Storage and Junction Temperature Range
- 65 to 150
- 65 to 125
C
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
C
ABSOLUTE RATINGS (limiting values)
Symbol
Test Conditions
Value
Unit
R
th(j-a)
Junction-ambient*
110
C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: t
p
300
s
<
2%.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
* *
T
j
= 25
C
V
R
= 80V
200
A
V
F
* *
T
j
= 25
C
I
F
= 10mA
0.32
V
T
j
= 25
C
I
F
= 100mA
0.42
T
j
= 25
C
I
F
= 1A
1
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
j
= 25
C
f = 1MHz
V
R
= 0V
120
pF
V
R
= 5V
35
DYNAMIC CHARACTERISTICS
1/4
2/4
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus V
RRM
in per
cent.
BAT 49
Figure 5. Capacitance C versus reverse
applied voltage V
R
(typical values).
Figure 6. Surge non repetitive forward current
for a rectangular pulse with t
10 ms.
Figure 7. Surge non repetitive forward current
versus number of cycles.
3/4
BAT 49
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.34g
PACKAGE MECHANICAL DATA
DO 41 Glass
C
A
B
O
/
O
/
D
O
/
D
C
4/4
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
1.102
D
0.712
0.863
0.028
0.034
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BAT 49
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