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Электронный компонент: BAT60J

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BAT60J
May 2000 - Ed: 4A
SMALL SIGNAL SCHOTTKY DIODE
n
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
LOW FORWARD VOLTAGE DROP
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EXTREMELY FAST SWITCHING
n
SURFACE MOUNTED DEVICE
FEATURES AND BENEFITS
Schottky barrier diode encapsulated in a SOD-323
small SMD package.
This device is intended for use in portable
equipments. It is suited for DC to DC converters,
step-up conversion and power management.
DESCRIPTION
SOD-323
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
10
V
I
F
Peak forward current
= 0.11
3
A
I
FSM
Surge non repetitive forward current
tp=10ms
5
A
P
tot
Power Dissipation
Ta=25
C
310
mW
T
stg
Storage temperature range
- 65 to +150
C
Tj
Maximum operating junction temperature *
150
C
TL
Maximum temperature for soldering during 10s
260
C
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
R
th (j-a)
Junction to ambient (*)
400
C/W
(*) Mounted on epoxy board with recommended pad layout.
THERMAL RESISTANCE
* :
dPtot
dTj
Rth j
a
<
-
1
(
)
thermal runaway condition for a diode on its own heatsink
A
K
60
BAT60J
2/5
Symbol
Tests Conditions
Tests conditions
Min.
Typ.
Max.
Unit
V
F
*
Forward voltage drop
Tj = 25
C
I
F
= 10 mA
0.28
0.32
V
I
F
= 100 mA
0.35
0.40
I
F
= 1 A
0.53
0.58
I
R
**
Reverse leakage current
Tj = 25
C
V
R
= 5 V
1
3
A
Tj = 25
C
V
R
= 8 V
1.3
4
Tj = 80
C
V
R
= 8 V
73
150
STATIC ELECTRICAL CHARACTERISTICS
Pulse test: * tp = 380
s,
< 2%
** tp = 5ms,
< 2%
To evaluate the conduction losses the following equation:
P = 0.38 x I
F(AV)
+ 0.17 I
F
2
(RMS)
BAT60J
3/5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
IF(av) (A)
PF(av)(W)
T
=tp/T
tp
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Tamb(
C)
IF(A)
T
=tp/T
tp
Fig. 2-1: Peak forward current versus ambient
temperature (
= 0.11).
0
25
50
75
100
125
150
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
Tamb(
C)
IF(av)(A)
T
=tp/T
tp
Fig. 2-2: Average forward current versus ambient
temperature (
= 0.5).
1E-3
1E-2
1E-1
1E+0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
t(s)
IM(A)
Ta=25
C
Ta=50
C
Ta=75
C
I
M
t
=0.5
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values).
1E-4
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1E-3
1E-2
1E-1
1E+0
t(s)
Zth(j-a)/Rth(j-a)
= 0.5
= 0.2
= 0.1
Single pulse
T
=tp/T
tp
Fig. 4: Relative variation of thermal impedance junc-
tion to ambient versus pulse duration (Epoxy printed
circuit board FR4 with recommended pad layout).
0
1
2
3
4
5
6
7
8
9
10
1E-4
1E-3
1E-2
1E-1
1E+0
1E+1
VR(V)
IR(mA)
Tj=80
C
Tj=25
C
Tj=150
C
Fig. 5: Reverse leackage current versus reverse
voltage applied (typical values).
BAT60J
4/5
0
25
50
75
100
125
150
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
Tj(
C)
IR[Tj] / IR[Tj=25
C]
VR=8V
Fig. 6: Reverse leackage current versus junction
temperature (typical values).
1
10
10
100
VR(V)
C(pF)
F=1MHz
Tj=25
C
Fig. 7: Junction capacitance versus reverse voltage
applied (typical values).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1E-1
1E+0
1E+1
VFM(V)
IFM(A)
Tj=150
C
(Typical values)
Tj=80
C
(Typical values)
Tj=25
C
(Maximum values)
Fig. 8-1: Forward voltage drop versus forward cur-
rent (High level).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VFM(V)
IFM(A)
Tj=150
C
(Typical values)
Tj=25
C
(Maximumvalues)
Tj=80
C
(Typical values)
Fig. 8-2: Forward voltage drop versus forward cur-
rent (Low level).
0
10
20
30
40
50
60
70
80
90
100
100
150
200
250
300
350
400
450
500
550
600
S(Cu) (mm )
Rth(j-a) (
C/W)
IF=0.75A
Fig. 9: Thermal resistance junction to ambient ver-
sus copper surface (epoxy printed circuit board FR4,
copper thickness: 35
m).
BAT60J
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2000 STMicroelectronics - Printed in Italy - All rights reserved.
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http://www.st.com
PACKAGE MECHANICAL DATA
SOD-323
H
b
D
E
A1
A
L
Q1
c
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
1.17
0.046
A1
0
0.1
0
0.004
b
0.25
0.44
0.01
0.017
c
0.1
0.25
0.004
0.01
D
1.52
1.8
0.06
0.071
E
1.11
1.45
0.044
0.057
H
2.3
2.7
0.09
0.106
L
0.1
0.46
0.004
0.02
Q1
0.1
0.41
0.004
0.016
Type
Marking
Package
Weight
Base qty
Delivery mode
BAT60J
60
SOD-323
0.005 g.
3000
Tape & reel
n
Epoxy meets UL94V-0
MARKING