BC161
GENERAL PURPOSE TRANSISTORS
DESCRIPTION
The BC161 is a silicon planar epitaxial PNP
transistors in Jedec TO-39 metal case. They are
particularly designed for audio amplifiers and
switching application up to 1A.
The complementary NPN type is the BC141.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collect or-Base Voltage (I
E
= 0)
-60
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
-60
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
-5
V
I
C
Collect or Current
-1
A
I
B
Base Current
-0. 1
A
P
t ot
Total Dissipation at T
amb
45
o
C
at T
case
45
o
C
0.65
3.7
W
W
T
stg
St orage Temperature
-55 t o 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
TO-39
1/5
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= -60 V
V
CE
= -60 V
T
amb
= 150
o
C
-100
-100
nA
A
V
( BR)CBO
Collect or-Base
Breakdown Volt age
(I
E
= 0)
I
C
= -100
A
-60
V
V
( BR)CEO
Collect or-Emitter
Breakdown Volt age
(I
B
= 0)
I
C
= -10 mA
-60
V
V
(BR)EBO
Emitt er-Base
Breakdown Volt age
(I
C
= 0)
I
E
= -100
A
-5
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= -100 mA
I
B
= -10 mA
I
C
= -500 mA
I
B
= -50 mA
I
C
= -1 A
I
B
= -100 mA
-0. 1
-0.35
-0. 6
-1
V
V
V
V
BE(on)
Base-Emitt er O n
Voltage
I
C
= -1 A
V
CE
= -1 V
-1
-1.7
V
h
FE
DC Current G ain
I
C
= -100
A
V
CE
= -1 V
for BC161
for BC161 Gr. 6
for BC161 Gr. 10
for BC161 Gr. 16
I
C
= -100 mA
V
CE
= -1 V
for BC161
for BC161 Gr. 6
for BC161 Gr. 10
for BC161 Gr. 16
I
C
= -1 A
V
CE
= -1 V
for BC161
for BC161 Gr. 6
for BC161 Gr. 10
for BC161 Gr. 16
40
40
63
100
110
46
80
120
140
63
100
160
26
15
20
30
250
100
160
250
f
T
Transit ion F requency
I
C
= -50 mA
V
CE
= -10 V
50
MHz
C
CBO
Collect or Base
Capacitance
I
E
= 0
V
CB
= -20 V
f = 1MHz
15
30
pF
C
EBO
Emitt er Base
Capacitance
I
C
= 0
V
CB
= -0.5 V
f = 1MHz
180
pF
t
on
Turn-on T ime
I
C
= -100 mA
I
B1
= -5 mA
500
ns
t
of f
Turn-off T ime
I
C
= -100 mA
I
B1
= I
B2
= -5 mA
650
ns
Pulsed: Pulse duration = 300
s, duty cycle
1 %
BC161
2/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BC161
5/5
PDF 
ZIP
