BC847B
BC847C
SMALL SIGNAL NPN TRANSISTORS
PRELIMINARY DATA
s
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
s
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
s
TAPE AND REEL PACKING
s
BC847B - THE PNP COMPLEMENTARY
TYPE IS BC857B
APPLICATIONS
s
WELL SUITABLE FOR PORTABLE
EQUIPMENT
s
SMALL LOAD SWITCH TRANSISTORS
WITH HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERNAL SCHEMATIC DIAGRAM
June 2002
SOT-23
Type
Marking
BC847B
1F
BC847C
1G
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
50
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
45
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
6
V
I
C
Collector Current
100
mA
I
CM
Collector Peak Current
200
mA
P
tot
Total Dissipation at T
C
= 25
o
C
250
mW
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/4
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-Ambient Max
500
o
C/W
Device mounted on a PCB area of 1 cm
2
.
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 30 V
V
CB
= 30 V T
C
= 150
o
C
15
5
nA
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
100
nA
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= 10
A
50
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 2 mA
45
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10
A
6
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 mA I
B
= 0.5 mA
I
C
= 100 mA I
B
= 5 mA
0.09
0.2
0.25
0.6
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 10 mA I
B
= 0.5 mA
I
C
= 100 mA I
B
= 5 mA
0.7
0.9
V
V
V
BE(on)
Base-Emitter On
Voltage
I
C
= 2 mA V
CE
= 5 V
I
C
= 10 mA V
CE
= 5 V
0.58
0.66
0.7
0.77
V
V
h
FE
DC Current Gain
I
C
= 10
A V
CE
= 5 V
for BC847B
for BC847C
I
C
= 2 mA V
CE
= 5 V
for BC847B
for BC847C
200
420
150
270
290
520
450
800
f
T
Transition Frequency
I
C
= 10 mA V
CE
= 5 V f = 100MHz
100
MHz
C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= 10 V f = 1 MHz
2.5
pF
NF
Noise Figure
V
CE
= 5 V I
C
= 0.2 mA f = 1KHz
f = 200 Hz R
G
= 2 K
2
10
dB
Pulsed: Pulse duration = 300
s, duty cycle
2 %
BC847B / BC847C
2/4
DIM.
mm
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
0.85
1.1
33.4
43.3
B
0.65
0.95
25.6
37.4
C
1.20
1.4
47.2
55.1
D
2.80
3
110.2
118
E
0.95
1.05
37.4
41.3
F
1.9
2.05
74.8
80.7
G
2.1
2.5
82.6
98.4
H
0.38
0.48
14.9
18.8
L
0.3
0.6
11.8
23.6
M
0
0.1
0
3.9
N
0.3
0.65
11.8
25.6
O
0.09
0.17
3.5
6.7
0044616/B
SOT-23 MECHANICAL DATA
BC847B / BC847C
3/4
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics Printed in Italy All Rights Reserved
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BC847B / BC847C
4/4
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