BCP52/53
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s
GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
s
NPN COMPLEMENTS ARE BCP55 AND
BCP56 RESPECTIVELY
INTERNAL SCHEMATIC DIAGRAM
October 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BCP52
BCP53
V
CBO
Collector-Base Voltage (I
E
= 0)
-60
-100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-60
-80
V
V
CER
Collector-Emitter Voltage (R
BE
= 1K
)
-60
-100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-5
V
I
C
Collector Current
-1
A
I
CM
Collector Peak Current (t
p
< 5 ms)
-1.5
A
I
B
Base Current
-0.1
A
I
BM
Base Peak Current (t
p
< ms)
-0.2
A
P
tot
Total Dissipation at T
c
= 25
o
C
2
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
2
3
SOT-223
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THERMAL DATA
R
thj-amb
R
th j-ta b
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -30 V
V
CB
= -30 V T
j
= 125
o
C
-100
-10
nA
A
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= -100
A
for BCP52
for BCP53
-60
-100
V
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -20 mA
for BCP52
for BCP53
-60
-80
V
V
V
(BR)CER
Collector-Emitter
Breakdown Voltage
(R
BE
= 1 K
)
I
C
= -100
A
for BCP52
for BCP53
-60
-100
V
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
C
= -10
A
-5
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -500 mA I
B
= -50 mA
-0.5
V
V
BE(on)
Base-Emitter On
Voltage
I
C
= -500 mA V
CE
= -2 V
-1
V
h
FE
DC Current Gain
I
C
= -5 mA V
CE
= -2 V
I
C
= -150 mA V
CE
= -2 V for Gr. 6
I
C
= -150 mA V
CE
= -2 V for Gr. 10
I
C
= -150 mA V
CE
= -2 V for Gr. 16
I
C
= -500 mA V
CE
= -2 V
25
40
63
100
25
100
160
250
f
T
Transition Frequency
I
C
= -10 mA V
CE
= -5 V f = 35 MHz
50
MHz
Pulsed: Pulse duration = 300
s, duty cycle
1.5 %
BCP52/53
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DIM.
mm
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
C
C
B
E
L
a
b
e1
l1
f
g
c
d
l2
e4
P008B
SOT-223 MECHANICAL DATA
BCP52/53
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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.
BCP52/53
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