BCY58
BCY59
January 1989
LOW NOISE AUDIO AMPLIFIERS
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
Parameter
BCY58
BCY59
Unit
V
CES
Collector-emitter Voltage (V
BE
= 0)
32
45
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
32
45
V
V
EBO
Emitter-base Voltage (I
C
= 0)
7
V
I
C
Collector Current
200
mA
I
B
Base Current
50
mA
P
t o t
Total Power Dissipation at T
amb
25
C
at T
c as e
45
C
0.39
1
mW
W
T
s t g
, T
j
Storage and Junction Temperature
65 to 200
C
The BCY58 and BCY59 are silicon planar epitaxial
NPN transistors in Jedec TO-18 metal case.
They are intended for use in audio input stages,
driver stages and low-noise input stages. The com-
plementary PNP types are respectively the BCY78
and BCY79.
TO-18
INTERNAL SCHEMATIC DIAGRAM
1/6
THERMAL DATA
R
t h j- cas e
R
t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
150
450
C/W
C/W
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Mi n.
Typ.
Max.
Unit
I
CE S
Collector Cutoff Current
(V
BE
= 0)
For BCY58
V
CE
= 32 V
V
CE
= 32 V
For BCY59
V
CE
= 45 V
V
CE
= 45 V
T
amb
= 150
C
T
amb
= 150
C
0.1
0.1
0.1
0.1
10
10
10
10
nA
A
nA
A
I
CE X
Collector Cutoff Current
(V
BE
= 0.2 V)
For BCY58
V
CE
= 32 V
For BCY59
V
CE
= 45 V
T
amb
= 100
C
T
amb
= 100
C
20
20
A
A
I
E BO
Emitter cutoff Current
(I
C
= 0)
V
EB
= 5 V
10
nA
V
(BR)CE O
*
Collector-emitter Breakdown
Voltage (I
B
= 0)
I
C
= 2 mA
For BCY58
For BCY59
32
45
V
V
(BR)EBO
*
Emitter-base Breakdown Voltage
(I
C
= 0)
I
E
= 10
A
7
V
V
CE( sat )
*
Collector-Emitter Saturation
Voltage
I
C
= 10 mA
I
C
= 100 mA
I
B
= 0.25 mA
I
B
= 2.5 mA
0.12
0.4
0.35
0.7
V
V
V
BE
Base-emitter Voltage
I
C
= 2 mA
I
C
= 100 mA
V
CE
= 5 V
V
CE
= 1 V
0.55
0.65
0.75
0.7
V
V
V
B E
(
s at
)*
Base-emitter Saturation Voltage
I
C
= 10 mA
I
C
= 100 mA
I
B
= 0.25 mA
I
B
= 2.5 mA
0.6
0.75
0.7
0.9
0.85
1.2
V
V
h
F E
*
DC Current Gain
I
C
=10
A
I
C
= 2 mA
I
C
=10 mA
I
C
=100 mA
V
CE
= 5 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
V
CE
= 5 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
V
CE
= 1 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
V
CE
=1 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
20
40
100
120
120
180
250
380
80
80
120
160
240
40
40
45
60
60
195
100
140
195
280
350
170
250
350
500
365
175
260
365
520
630
220
310
460
630
*
Pulsed : pulse duration = 300
s, duty cycle = 1 %.
BCY58-BCY59
2/6
DC Current Gain.
Collector-emitter Saturation Voltage.
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Mi n.
Typ.
Max.
Unit
h
f e
Small Signal Current Gain
I
C
= 2 mA
f = 1 kHz
V
CE
= 5 V
Gr.VII
Gr.VIII
Gr.IX
Gr.X
125
125
175
250
350
250
350
500
700
f
T
Transition Frequency
I
C
=10 mA
f = 100 MHz
V
CE
= 5 V
200
MHz
C
EBO
Emitter-base Capacitance
I
C
= 0
f = 1 MHz
V
E B
= 0.5 V
11
15
pF
C
CBO
Collector-base Capacitance
I
E
= 0
f = 1 MHz
V
CB
= 10 V
3.5
6
pF
NF
Noise Figure
I
C
= 0.2 mA
R
g
= 2 k
V
CE
= 5 V
f = 1 kHz
2
6
dB
t
o n
Turn-on Time
I
C
= 10 mA
I
B1
= 1 mA
I
C
= 100 mA
I
B1
= 10 mA
V
CC
= 10 V
V
CC
= 10 V
85
55
150
150
ns
ns
t
o f f
Turn-off Time
I
C
= 10 mA
I
B1
= I
B2
= 1
I
C
= 100 mA
I
B1
= I
B2
= 10
V
CC
= 10 V
mA
V
CC
= 10 V
mA
480
480
800
800
ns
ns
*
Pulsed : pulse duration = 300
s, duty cycle = 1 %.
BCY58-BCY59
3/6
Noise Figure (f = 10 kHz).
Noise Figure vs. Frequency.
Noise Figure (f = 100 Hz).
Noise Figure (f = 1 kHz).
Transition Frequency.
Collector-base Capacitance.
BCY58-BCY59
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45
o
45
o
L
G
I
D
A
F
E
B
H
C
TO-18 MECHANICAL DATA
0016043
BCY58-BCY59
5/6
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