BD234
SILICON PNP TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
PNP TRANSISTOR
DESCRIPTION
The BD234 is a silicon epitaxial-base PNP power
transistor in Jedec SOT-32 plastic package
inteded for use in medium power linear and
switching applications.
INTERNAL SCHEMATIC DIAGRAM
May 1997
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
-45
V
V
CER
Collector-Emitter Voltage (R
BE
= 1K
)
-45
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-45
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-5
V
I
C
Collector Current
-2
A
I
CM
Collector Peak Current
-6
A
P
tot
Total Dissipation at T
c
25
o
C
25
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
5
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -45 V
V
CB
= -45 V T
c
= 150
o
C
-0.1
-2
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -5 V
-1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= -100 mA
-45
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -1 A I
B
= -0.1 A
-0.6
V
V
BE
Base-Emitter Voltage
I
C
= -1 A V
CE
= -2 V
-1.3
V
h
FE
DC Current Gain
I
C
= -150 mA V
CE
= -2 V
I
C
= -1 A V
CE
= -2 V
40
25
f
T
Transition frequency
I
C
= -250 mA V
CE
= -10 V
3
MHz
h
FE1
/h
FE2
Matched Pairs
I
C
= -150 mA V
CE
= -2 V
1.6
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BD234
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
BD234
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BD234
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