BD235/BD236
BD237/BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.
INTERNAL SCHEMATIC DIAGRAM
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
NPN
BD235
BD237
PNP
BD236
BD238
V
CBO
Collector-Base Voltage (I
E
= 0)
60
100
V
V
CER
Collector-Base Voltage (R
BE
= 1K
)
60
100
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
60
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
2
A
I
CM
Collector Peak Current
6
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
25
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
1/5
THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
5
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CE
= rated V
CEO
V
CE
= rated V
CEO
T
c
= 150
o
C
0.1
2
mA
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
I
C
= 100 mA
for BD235/BD236
for BD237/BD238
60
80
V
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 1 A
I
B
= 0.1 A
0.6
V
V
BE
Base-Emitt er Voltage
I
C
= 1 A
V
CE
= 2 V
1.3
V
h
FE
DC Current G ain
I
C
= 150 mA
V
CE
= 2 V
I
C
= 1 A
V
CE
= 2 V
40
25
f
T
Transit ion f requency
I
C
= 250 mA
V
CE
= 10 V
3
MHz
h
FE1
/h
FE 2
Matched Pairs
I
C
= 150 mA
V
CE
= 2 V
1.6
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Derating Curves
BD235/BD236/BD237/BD238
2/5
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (PNP type)
Collector-Base Capacitance (PNP type)
BD235/BD236/BD237/BD238
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
BD235/BD236/BD237/BD238
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BD235/BD236/BD237/BD238
5/5
PDF 
ZIP