BD241A/B/C
BD242A/B/C
COMPLEMENTARY SILICON POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD241A, BD241B and BD241C are silicon
epitaxial-base NPN transistors mounted in Jedec
TO-220 plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD242A,
BD242B and BD242C respectively.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BD241A
BD241B
BD241C
PNP
BD242A
BD242B
BD242C
V
CER
Collector-Base Voltage (R
BE
= 100
)
70
90
115
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
60
80
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
3
A
I
CM
Collector Peak Current
5
A
I
B
Base Current
1
A
P
tot
Total Dissipation at T
c
25
o
C
40
W
P
tot
Total Dissipation at T
amb
25
o
C
2
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.13
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= rated V
CEO
0.2
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
for BD241A/BD242A V
CE
= 30 V
for BD241B/BD242B V
CE
= 60 V
for BD241C/BD242C V
CE
= 60 V
0.3
0.3
0.3
mA
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 30 mA
for BD241A/BD242A
for BD241B/BD242B
for BD241C/BD242C
60
80
100
V
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 3 A I
B
= 0.6 A
1.2
V
V
BE
Base-Emitter Voltage
I
C
= 3 A V
CE
= 4 V
1.8
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 4 V
I
C
= 3 A V
CE
= 4 V
25
10
h
fe
Small Signal Current
Gain
I
C
= 0.5 A V
CE
= 10 V f = 1MHz
I
C
= 0.5 A V
CE
= 10 V f = 1KHz
3
20
Pulsed: Pulse duration = 300
s, duty cycle
2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
BD241A/B/C/BD242A/B/C
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
BD241A/B/C/BD242A/B/C
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
BD241A/B/C/BD242A/B/C
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