BD433/5/7
BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
The complementary PNP types are BD434,
BD436, and BD438 respectively.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BD433
BD435
BD437
PNP
BD434
BD436
BD438
V
CBO
Collector-Base Voltage (I
E
= 0)
22
32
45
V
V
CES
Collector-Emitter Voltage (V
BE
= 0)
22
32
45
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
22
32
45
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
4
A
I
CM
Collector Peak Current (t
10 ms)
7
A
I
B
Base Current
1
A
P
tot
Total Dissipation at T
c
25
o
C
36
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
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THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.5
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
for BD433/434 V
CB
= 22 V
for BD435/436 V
CB
= 32 V
for BD437/438 V
CB
= 45 V
100
100
100
A
A
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
for BD433/434 V
CE
= 22 V
for BD435/436 V
CE
= 32 V
for BD437/438 V
CE
= 45 V
100
100
100
A
A
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA for BD433/434
for BD435/436
for BD437/438
22
32
45
V
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 0.2 A
for BD433/434
for BD435/436
for BD437/438
0.2
0.2
0.2
0.5
0.5
0.6
V
V
V
V
BE
Base-Emitter Voltage
I
C
= 10 mA V
CE
= 5 V
I
C
= 2 A V
CE
= 1 V
for BD433/434
for BD435/436
for BD437/438
0.58
1.1
1.1
1.2
V
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA V
CE
= 5 V
for BD433/434
for BD435/436
for BD437/438
I
C
= 500 mA V
CE
= 1 V
I
C
= 2 A V
CE
= 1 V
for BD433/434
for BD435/436
for BD437/438
40
40
30
85
50
50
40
130
130
130
140
h
FE1
/
h
FE2
Matched Pair
IC = 500 mA V
CE
= 1 V
1.4
f
T
Transition frequency
I
C
= 250 mA V
CE
= 1 V
3
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BD433/434/435/436/437/438
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
BD433/434/435/436/437/438
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
BD433/434/435/436/437/438
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