BD533 BD535 BD537
BD534 BD536 BD538
COMPLEMENTARY SILICON POWER TRANSISTORS
s
BD534, BD535, BD536, BD537 AND BD538
ARE STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD533, BD535, and BD537 are silicon
Epitaxial-Base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications.
The complementary PNP types are BD534,
BD536, and BD538 respectively.
INTERNAL SCHEMATIC DIAGRAM
February 2003
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BD533
BD535
BD537
PNP
BD534
BD536
BD538
V
CBO
Collector-Base Voltage (I
E
= 0)
45
60
80
V
V
CES
Collector-Emitter Voltage (V
BE
= 0)
45
60
80
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
45
60
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C,
I
E
Collector and Emitter Current
8
A
I
B
Base Current
1
A
P
tot
Total Dissipation at T
c
25
o
C
50
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
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THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.5
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
for BD533/534 V
CB
= 45 V
for BD535/536 V
CB
= 60 V
for BD537/538 V
CB
= 80 V
100
100
100
A
A
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
for BD533/534 V
CE
= 45 V
for BD535/536 V
CE
= 60 V
for BD537/538 V
CE = 8 0 V
100
100
100
A
A
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA for BD533/534
for BD535/536
for BD537/538
45
60
80
V
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 0.2 A
I
C
= 6 A I
B
= 0.6 A
0.8
0.8
V
V
V
BE
Base-Emitter Voltage
I
C
= 2 A V
CE
= 2 V
1.5
V
h
FE
DC Current Gain
I
C
= 10 mA V
CE
= 5 V
for BD533/534
for BD535/536
for BD537/538
I
C
= 500 mA V
CE
= 2 V
I
C
= 2 A V
CE
= 2 V
for BD533/534
for BD535/536
for BD537/538
20
20
15
40
25
25
15
f
T
Transition frequency
I
C
= 500 mA V
CE
= 1 V
3
12
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BD533 BD534 BD535 DB536 BD537 BD538
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DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
0.409
L2
16.40
0.645
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
M
2.60
0.102
DIA.
3.75
3.85
0.147
0.151
P011CI
TO-220 MECHANICAL DATA
BD533 BD534 BD535 DB536 BD537 BD538
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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BD533 BD534 BD535 DB536 BD537 BD538
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