BD677/A/679/A/681
BD678/A/680/A/682
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
MONOLITHIC DARLINGTON
CONFIGURATION
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BD677, BD677A, BD679, BD679A and
BD681 are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec SOT-32 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD678,
BD678A,
BD680,
BD680A
and
BD682
respectively.
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ.= 7K
R
2
T yp. = 230
September 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
NPN
BD677/A
BD679/A
BD681
PNP
BD678/A
BD680/A
BD682
V
CBO
Collector-Base Voltage (I
E
= 0)
60
80
100
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
60
80
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
4
A
I
CM
Collector Peak Current
6
A
I
B
Base Current
0.1
A
P
t ot
Tot al Dissipation at T
c
25
o
C
40
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
3
2
1
SOT-32
1/6
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CE
= rated V
CBO
V
CE
= rated V
CBO
T
C
= 100
o
C
0.2
2
mA
mA
I
CEO
Collect or Cut-off
Current (I
B
= 0)
V
CE
= half rated V
CEO
0.5
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
I
C
= 50 mA
for BD677/677A/678/ 678A
for BD679/679A/680/ 680A
for BD681/682
60
80
100
V
V
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
for BD677/678/ 679/680/681/682
I
C
= 1. 5 A
I
B
= 30 mA
for BD677A/ 678A/679A/680A
I
C
= 2 A
I
B
= 40 mA
2.5
2.8
V
V
V
BE
Base-Emitt er Voltage
for BD677/678/ 679/680/681/682
I
C
= 1. 5 A
V
CE
= 3 V
for BD677A/ 678A/679A/680A
I
C
= 2 A
V
CE
= 3 V
2.5
2.5
V
V
h
FE
DC Current G ain
for BD677/678/ 679/680/681/682
I
C
= 1. 5 A
V
CE
= 3 V
for BD677A/ 678A/679A/680A
I
C
= 2 A
V
CE
= 3 V
750
750
h
f e
Small Signal Current
Gain
I
C
= 1. 5 A
V
CE
= 3 V
f = 1MHz
1
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BD677/677A/678/678A/679/679A/680/680A/681/682
2/6
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (PNP type)
BD677/677A/678/678A/679/679A/680/680A/681/682
3/6
Base-Emitter On Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types)
Freewheel Diode Forward Voltage (PNP types)
BD677/677A/678/678A/679/679A/680/680A/681/682
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
BD677/677A/678/678A/679/679A/680/680A/681/682
5/6
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