BD909/911
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220
plastic package. They are intented for use in
power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Un it
NPN
BD909
BD911
PNP
BD910
BD912
V
CBO
Collector-Base Voltage (I
E
= 0)
80
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
E
,I
C
Collector Current
15
A
I
B
Base Current
5
A
P
tot
T otal Dissipation at T
c
25
o
C
90
W
T
s tg
Storage Temperat ure
-65 t o 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
1/6
THERMAL DATA
R
thj -case
Thermal Resistance Junction-case
Max
1. 4
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
I
CBO
Collector Cut -of f
Current (I
E
= 0)
for BD909/910
V
CB
= 80 V
for BD911/912
V
CB
= 100 V
T
case
= 150
o
C
for BD909/910
V
CB
= 80 V
for BD911/912
V
CB
= 100 V
500
500
5
5
A
A
mA
mA
I
CEO
Collector Cut -of f
Current (I
B
= 0)
for BD909/910
V
CE
= 40 V
for BD911/912
V
CE
= 50 V
1
1
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO (s us)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
for BD909/ 910
for BD911/912
80
100
V
V
V
CE(sat)
Collector-Emitter
Sat uration Volt age
I
C
= 5 A
I
B
= 0. 5 A
I
C
= 10 A
I
B
= 2. 5 A
1
3
V
V
V
BE(sat)
Base-Emitter
Sat uration Volt age
I
C
= 10 A
I
B
= 2. 5 A
2. 5
V
V
BE
Base-Emitter Voltage
I
C
= 5 A
V
CE
= 4 V
1. 5
V
h
F E
DC Current Gain
I
C
= 0. 5 A
V
CE
= 4 V
I
C
= 5 A
V
CE
= 4 V
I
C
= 10 A
V
CE
= 4 V
40
15
5
250
150
f
T
Transition frequency
I
C
= 0. 5 A
V
CE
= 4 V
3
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
Derating Curves
BD909 / BD910 / BD911 / BD912
2/6
DC Current Gain (NPN type)
DC Transconductance(NPN type)
Collector-Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
DC Transconductance(PNP type)
Collector-Emitter Saturation Voltage (PNP type)
BD909 / BD910 / BD911 / BD912
3/6
Base-Emitter Saturation Voltage (NPN type)
Transition Frequency (NPN type)
Base-Emitter Saturation Voltage (PNP type)
Transition Frequency (PNP type)
BD909 / BD910 / BD911 / BD912
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BD909 / BD910 / BD911 / BD912
5/6
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