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Электронный компонент: BDX33B

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BDX33B BDX33C
BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION
The
BDX33B
and
BDX33C
are
silicon
Epitaxial-Base
NPN
power
transistors
in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34B and
BDX34C respectively.
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Un it
NPN
BDX33B
BDX33C
PNP
BDX34B
BDX34C
V
CBO
Collector-Base Voltage (I
E
= 0)
80
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
80
100
V
I
C
Collector Current
10
A
I
CM
Collector Peak Current
15
A
I
B
Base Current
0. 25
A
P
tot
T otal Dissipat ion at T
c
25
o
C
70
W
T
s tg
Storage Temperature
-65 t o 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R
1
Typ. = 10 K
R
2
Typ. = 150
1/4
THERMAL DATA
R
thj -case
Thermal Resistance Junction-case
1.78
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbo l
Parameter
Test Co nditi ons
Mi n.
Typ .
Max.
Unit
I
CBO
Collector Cut-of f Current
(I
E
= 0)
f or BDX33B/34B
V
CB
= 80 V
f or BDX33C/34C
V
CB
= 100V
T
cas e
= 100
o
C
f or BDX33B/34B
V
CB
= 80 V
f or
BDX33C/34C
V
CB
= 100 V
0.2
0.2
5
5
mA
mA
mA
mA
I
CEO
Collector Cut-of f Current
(I
B
= 0)
f or BDX33B/34B
V
CE
= 40 V
f or BDX33C/34C
V
CE
= 50V
T
cas e
= 100
o
C
f or BDX33B/34B
V
CE
= 40 V
f or BDX33C/34C
V
CE
= 50 V
0.5
0.5
10
10
mA
mA
mA
mA
I
EBO
Emitter Cut-of f Current
(I
C
= 0)
V
EB
= 5 V
5
mA
V
CEO (s us)
Collector-Emitt er Sust aining
Voltage (I
B
= 0)
I
C
=100 mA
for BDX33B/34B
for BDX33C/ 34C
80
100
V
V
V
CER(sus)
Collector-emitt er Sustaining
Voltage (R
BE
=100
)
I
C
= 100 mA for BDX33B/34B
for BDX33C/34C
80
100
V
V
V
CEV( su s)
Collector-emitt er Sustaining
Voltage (V
BE
=-1.5 V)
I
C
= 100 mA for BDX33B/34B
for BDX33C/34C
80
100
V
V
V
CE(sat)
Collector-emitt er Saturat ion
Voltage
I
C
= 3 A
I
B
= 6 mA
2.5
V
V
BE
Base-emitter Voltage
I
C
= 3 A
V
CE
= 3 V
2.5
V
h
FE
DC Current G ain
I
C
= 3 A
V
CE
= 3 V
750
V
V
F
Parallel-Diode Forward
Voltage
I
F
= 8 A
4
V
h
fe
Small Signal Current Gain
I
C
= 1 A
V
CE
= 5 V
f = 1MHz
100
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
BDX33B BDX33C BDX34B BDX34C
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BDX33B BDX33C BDX34B BDX34C
3/4
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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BDX33B BDX33C BDX34B BDX34C
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