BDX53F
BDX54F
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
MONOLITHIC DARLINGTON
CONFIGURATION
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
T
he BDX53F is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration, mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications. The complementary PNP
type is BDX54F.
INTERNAL SCHEMATIC DIAGRAM
October 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BDX53F
PNP
BDX54F
V
CBO
Collector-Base Voltage (I
E
= 0)
160
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
160
V
V
EBO
Emitter-base Voltage (I
C
= 0)
5
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current
12
A
I
B
Base Current
0.2
A
P
tot
Total Dissipation at T
c
25
o
C
60
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
R
1
Typ. = 10 K
R
2
Typ. = 150
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.08
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-off
Current (I
E
= 0)
V
CE
= 80 V
0.5
mA
I
CBO
Collector Cut-off
Current (I
B
= 0)
V
CB
= 160 V
0.2
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
5
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 50 mA
160
V
V
CE(sat)
Collector-emitter
Saturation Voltage
I
C
= 2 A I
B
=10 mA
2
V
V
BE(sat)
Base-emitter
Saturation Voltage
I
C
= 2 A I
B
=10 mA
2.5
V
h
FE
DC Current Gain
I
C
= 2 A V
CE
= 5 V
I
C
= 3 A V
CE
= 5 V
500
150
V
F
Parallel Diode Forward
Voltage
I
F
= 2 A
2.5
V
h
fe
Small Signal Current
Gain
I
C
= 0.5 A
f = 1MHz V
CE
= 2 V
20
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BDX53F / BDX54F
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
0.409
L2
16.40
0.645
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
M
2.60
0.102
DIA.
3.75
3.85
0.147
0.151
P011CI
TO-220 MECHANICAL DATA
BDX53F / BDX54F
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
2003 STMicroelectronics All Rights reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
BDX53F / BDX54F
4/4
PDF 
ZIP