BDX87C
BDX88C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BDX87C is a silicon epitaxial-base NPN
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
The complementary PNP types is the BDX88C.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BDX87C
PNP
BDX88C
V
CBO
Collector-base Voltage (I
E
= 0)
100
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
100
V
V
EBO
Emitter-base Voltage (I
C
= 0)
5
V
I
C
Collector Current
12
A
I
CM
Collector Peak Current (repetitive)
18
A
I
B
Base Current
0.2
A
P
tot
Total Dissipation at T
c
25
o
C
120
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
1
2
TO-3
R
1
Typ. = 6 K
R
2
Typ. = 55
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.45
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 100 V
V
CB
= 100 V T
case
= 150
o
C
0.5
5
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CB
= 50 V
1
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
100
V
V
CE(sat)
Collector-emitter
Saturation Voltage
I
C
= 6 A I
B
= 24 mA
I
C
= 12 A I
B
= 120 mA
2
3
V
V
V
BE(sat)
Base-emitter
Saturation Voltage
I
C
= 12 A I
B
=120 mA
4
V
V
BE
Base-emitter Voltage
I
C
= 6 A V
CE
= 3 V
2.8
V
h
FE
DC Current Gain
I
C
= 5 A V
CE
= 3 V
I
C
= 6 A V
CE
= 3 V
I
C
= 12 A V
CE
= 3 V
1000
750
100
18000
V
F
Parallel-diode Forward
Voltage
I
F
= 3 A
I
F
= 8 A
2.5
1.8
V
V
h
fe
Small SignalCurrent
Gain
I
C
= 5 A V
CE
= 3 V
f = 1MHz
25
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BDX87C-BDX88C
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
BDX87C-BDX88C
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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BDX87C-BDX88C
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