BFW43
HIGH VOLTAGE AMPLIFIER
DESCRIPTION
The BFW43 is a silicon planar epitaxial PNP
transistors in Jedec TO-18 metal case. It is
designed for use in amplifiers where high voltage
and high gain are necessary. In particular, its
feature a V
CEO
of 150V are specified over a wide
range of curent.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collect or-Base Voltage (I
E
= 0)
-150
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
-150
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
-6
V
I
C
Collect or Current
-0. 1
A
P
t ot
Total Dissipation at T
amb
25
o
C
at T
case
25
o
C
0.4
1.4
W
W
T
stg
St orage Temperature
-55 t o 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
TO-18
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THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
125
438
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CE
= -100 V
V
CE
= -100 V
T
a mb
= 125
o
C
-0. 2
-0.03
-10
-10
nA
A
V
( BR)CBO
Collect or-Base
Breakdown Volt age
(I
E
= 0)
I
C
= -10
A
-150
V
V
( BR)CEO
Collect or-Emitter
Breakdown Volt age
(I
B
= 0)
I
C
= -2 mA
-150
V
V
(BR)EBO
Emitt er-Base
Breakdown Volt age
(I
C
= 0)
I
E
= -10
A
-6
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= -10 mA
I
B
= -1 mA
-0. 1
-0.5
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= -10 mA
I
B
= -1 mA
-0.74
-0.9
V
h
FE
DC Current G ain
I
C
= -1 mA
V
CE
= -10 V
I
C
= -10 mA
V
CE
= -10 V
I
C
= -10
A
V
CE
= -10 V
T
am b
= -55
o
C
40
40
85
100
30
f
T
Transit ion F requency
V
CE
= -10 V
f = 20 MHz
I
C
= -1 mA
I
C
= -10 mA
60
50
MHz
MHz
C
EBO
Emitt er Base
Capacitance
I
E
= 0
V
EB
= -0.5 V
f = 1MHz
20
25
pF
C
CBO
Collect or Base
Capacitance
I
E
= 0
V
CB
= -5 V
f = 1MHz
5
7
pF
Pulsed: Pulse duration = 300
s, duty cycle
1 %
DC Current Gain.
Collector-emitter Saturation Voltage.
BFW43
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BFW43
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