BFX34
SILICON NPN TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
DESCRIPTION
The BFX34 is a silicon epitaxial planar NPN
transistor in Jedec TO-39 metal case, intented for
high current applications.
Very low saturation voltage and high speed at
high current levels make it ideal for power drivers,
power amplifiers, switching power supplies and
relay drivers inverters.
INTERNAL SCHEMATIC DIAGRAM
June 1997
TO-39
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
120
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
60
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
6
V
I
C
Collector Current
5
A
P
tot
Total Dissipation at T
case
25
o
C
T
amb
25
o
C
0.87
5
W
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-amb Max
35
200
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 60 V
0.02
10
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 4 V
0.05
10
A
V
(BR)CBO
Collector-base
Breakdown Voltage
(I
E
= 0)
I
C
= 5 mA
120
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
60
V
V
EBO
Emitter-base Voltage
(I
C
= 0)
I
E
= 1 mA
6
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.5 A
0.4
1
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 5 A I
B
= -0.5 A
1.3
1.6
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 2 V
I
C
= 1.5 A V
CE
= 0.6 V
I
C
= 2 A V
CE
= 2 V
40
100
75
80
150
f
T
Transition Frequency
I
C
= 0.5 A V
CE
= 5 V
f = 20 MHz
70
100
MHz
C
EBO
Emitter-base
Capacitance
I
C
= 0.5 A V
EB
= 5 V
f = 1 MHz
300
500
pF
C
CBO
Collector-base
Capacitance
I
E
= 0 V
CB
= 10 V
f = 1 MHz
40
100
pF
t
on
Turn-on Time
I
C
= -0.5 A V
CC
= -20 V
I
B1
= -I
B2
= -50 mA
0.6
0.25
s
t
on
Turn-on Time
0.6
1.2
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BFX34
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45
o
(typ.)
L
G
I
D
A
F
E
B
H
P008B
TO-39 MECHANICAL DATA
BFX34
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BFX34
4/4
PDF 
ZIP