BSP30/31
BSP32/33
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s
GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
s
NPN COMPLEMENTS ARE BSP40, BSP41,
BSP42 AND BSP43 RESPECTIVELY
INTERNAL SCHEMATIC DIAGRAM
October 1995
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BSP30/BSP31
BSP32/BSP33
V
CBO
Collector-Base Voltage (I
E
= 0)
-70
-90
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
-60
-80
V
V
CES
Collector-Emitter Voltage (R
BE
= 1K
)
-70
-90
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
-5
V
I
C
Collector Current
-1
A
I
B
Base Current
-0.1
A
P
tot
Total Dissipation at T
c
= 25
o
C
2
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
2
3
SOT-223
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THERMAL DATA
R
th j-a mb
R
thj-tab
Thermal Resistance Junction-Ambient Max
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -60 V
V
CB
= -60 V T
j
= 150
o
C
-100
-50
nA
A
V
(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
I
C
= -100
A
for BSP30/BSP31
for BSP32/BSP33
-70
-90
V
V
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA
for BSP30/BSP31
for BSP32/BSP33
-60
-80
V
V
V
(BR)CES
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
I
C
= -10
A
for BSP30/BSP31
for BSP32/BSP33
-70
-90
V
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
C
= -10
A
-5
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
-0.25
-0.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -150 mA I
B
= -15 mA
I
C
= -500 mA I
B
= -50 mA
-1
-1.2
V
V
h
FE
DC Current Gain
for BSP30/BSP31
I
C
= -100
A V
CE
= -5 V
I
C
= -100 mA V
CE
= -5 V
I
C
= -500 mA V
CE
= -5 V
for BSP32/BSP33
I
C
= -100
A V
CE
= -5 V
I
C
= -100 mA V
CE
= -5 V
I
C
= -500 mA V
CE
= -5 V
10
40
30
30
50
50
120
300
f
T
Transition Frequency
I
C
= -50 mA V
CE
= -10 V f = 35 MHz
100
MHz
C
CBO
Collector-Base
Capacitance
I
E
= 0 V
CB
= -10 V f = 1 MHz
20
pF
C
EBO
Emitter-Base
Capacitance
I
C
= 0 V
EB
= -0.5 V f = 1 MHz
120
pF
t
on
Turn-on Time
I
C
= -100 mA I
B1
= -I
B2
= -5 mA
500
ns
t
off
Turn-on Time
650
ns
Pulsed: Pulse duration = 300
s, duty cycle
1.5 %
BSP30/31/32/33
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
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