BSX20
HIGH SPEED SATURATED SWITCHES
DESCRIPTION
The BSX20 is a silicon planar epitaxial NPN
transistors in Jedec TO-18 metal case. They are
primarily intended for veery high speed saturated
switching applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collect or-Base Voltage (I
E
= 0)
40
V
V
CES
Collect or-Emitt er Voltage (V
BE
= 0)
40
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
15
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
4.5
V
I
C
Collect or Current (t = 10
s)
0.5
A
P
t ot
Total Dissipation at T
amb
25
o
C
at T
case
25
o
C
0.36
1.2
W
W
T
stg
St orage Temperature
-65 t o 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
TO-18
1/6
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
146
486
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CB
= 20 V
V
CB
= 20 V
T
amb
= 150
o
C
0.4
30
A
A
I
CES
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= 15 V
T
amb
= 55
o
C
V
CE
= 40 V
0.4
1
A
A
I
CEX
Collect or Cut-off
Current (V
BE
= -3V)
V
CE
= 15 V
T
amb
= 55
o
C
0.6
A
I
BEX
Base Cut-off Current
(V
BE
= -3V)
V
CE
= 15 V
T
amb
= 55
o
C
0.6
A
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 4.5 V
10
A
V
CER( sus)
Collect or-Emitter
Sustaining Voltage
(R
BE
= 10
)
I
C
= 10 mA
20
V
V
( BR)CEO
Collect or-Emitter
Breakdown Volt age
(I
B
= 0)
I
C
= 10 mA
15
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 10 mA
I
B
= 1 mA
I
C
= 100 mA
I
B
= 10 mA
I
C
= 10 mA
I
B
= 0.3 mA
0.25
0.6
0.3
V
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 10 mA
I
B
= 1 mA
I
C
= 100 mA
I
B
= 10 mA
0. 7
0.85
1.5
V
V
V
BE(on)
Base-Emitt er O n
Voltage
I
C
= 30
A
V
CE
= 20 V
T
am b
= 100
o
C
350
mV
h
FE
DC Current G ain
I
C
= 10 mA
V
CE
= 1 V
I
C
= 100 mA
V
CE
= 2 V
I
C
= 10 mA
V
CE
= 1 V
T
am b
= -55
o
C
40
20
20
60
f
T
Transit ion F requency
I
C
= 10 mA
V
CE
= 10 V
500
600
MHz
C
CBO
Collect or Base
Capacitance
I
E
= 0
V
CB
= 5 V
4
pF
C
EBO
Emitt er Base
Capacitance
I
C
= 0
V
EB
= 1 V
4.5
pF
t
s
St orage Time
V
CC
= 10 V
I
C
= 10 mA
I
B1
= -I
B2
= 10 mA
6
13
ns
t
on
Turn-on T ime
V
CC
= 3 V
I
C
= 10 mA
I
B1
= 3 mA
V
CC
= 6 V
I
C
= 100 mA
I
B1
= 40 mA
12
7
ns
ns
t
off
Turn-off T ime
V
CC
= 3 V
I
C
= 10 mA
I
B1
= 3 mA
I
B2
= -1.5 mA
V
CC
= 6 V
I
C
= 100 mA
I
B1
= 40 mA
I
B2
= -20 mA
18
21
ns
ns
Pulsed: Pulse duration = 300
s, duty cycle
1 %
See test circuit
BSX20
2/6
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