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Электронный компонент: BTA06-600CW

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BTA/BTB06 Series
SNUBBERLESSTM, LOGIC LEVEL & STANDARD
6A TRIAC
S
April 2002 - Ed: 5A
MAIN FEATURES:
DESCRIPTION
Suitable for AC switching operations, the BTA/
BTB06 series can be used as an ON/OFF function
in applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control in light dimmers, motor speed
controllers,...
The snubberless and logic level versions (BTA/
BTB...W) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
Symbol
Value
Unit
I
T(RMS)
6
A
V
DRM
/V
RRM
600 and 800
V
I
G (Q
1
)
5 to 50
mA
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
TO-220AB
Tc = 110C
6
A
TO-220AB Ins.
Tc = 105C
I
TSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25C)
F = 50 Hz
t = 20 ms
60
A
F = 60 Hz
t = 16.7 ms
63
I
t
I
t Value for fusing
tp = 10 ms
21
A
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
100 ns
F = 120 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
4
A
P
G(AV)
Average gate power dissipation
Tj = 125C
1
W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
G
A2
A1
G
A2
A2
A1
G
A2
A1
TO-220AB
(BTB06)
TO-220AB Insulated
(BTA06)
BTA/BTB06 Series
2/6
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
s
SNUBBERLESSTM and LOGIC LEVEL (3 Quadrants)
s
STANDARD (4 Quadrants)
STATIC CHARACTERISTICS
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Symbol
Test Conditions
Quadrant
BTA/BTB06
Unit
TW
SW
CW
BW
I
GT
(1)
V
D
= 12 V R
L
= 30
I - II - III
MAX.
5
10
35
50
mA
V
GT
I - II - III
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125C
I - II - III
MIN.
0.2
V
I
H
(2)
I
T
= 100 mA
MAX.
10
15
35
50
mA
I
L
I
G
= 1.2 I
GT
I - III
MAX.
10
25
50
70
mA
II
15
30
60
80
dV/dt (2)
V
D
= 67 %V
DRM
gate open
Tj = 125C
MIN.
20
40
400
1000
V/s
(dI/dt)c (2)
(dV/dt)c = 0.1 V/s Tj = 125C
MIN.
2.7
3.5
-
-
A/ms
(dV/dt)c = 10 V/s Tj = 125C
1.2
2.4
-
-
Without snubber
Tj = 125C
-
-
3.5
5.3
Symbol
Test Conditions
Quadrant
BTA/BTB06
Unit
C
B
I
G
(1)
V
D
= 12 V R
L
= 30
I - II - III
IV
MAX.
25
50
50
100
mA
V
GT
ALL
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125C
ALL
MIN.
0.2
V
I
H
(2)
I
T
= 500 mA
MAX.
25
50
mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX.
40
50
mA
II
80
100
dV/dt (2)
V
D
= 67 %V
DRM
gate open Tj = 125C
MIN.
200
400
V/s
(dV/dt)c (2) (dI/dt)c = 2.7 A/ms
Tj = 125C
MIN.
5
10
V/s
Symbol
Test Conditions
Value
Unit
V
T
(2)
I
TM
= 5.5 A tp = 380 s
Tj = 25C
MAX.
1.55
V
V
to
(2)
Threshold voltage
Tj = 125C
MAX.
0.85
V
R
d
(2)
Dynamic resistance
Tj = 125C
MAX.
60
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
5
A
Tj = 125C
1
mA
BTA/BTB06 Series
3/6
THERMAL RESISTANCES
PRODUCT SELECTOR
BTB: non insulated TO-220AB package
ORDERING INFORMATION
OTHER INFORMATION
Note: xxx = voltage, y = sensitivity, z = type
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (AC)
TO-220AB
1.8
C/W
TO-220AB Insulated
2.7
R
th(j-a)
Junction to ambient
TO-220AB
TO-220AB Insulated
60
C/W
Part Number
Voltage (xxx)
Sensitivity
Type
Package
600 V
800 V
BTA/BTB06-xxxB
X
X
50 mA
Standard
TO-220AB
BTA/BTB06-xxxBW
X
X
50 mA
Snubberless
TO-220AB
BTA/BTB06-xxxC
X
X
25 mA
Standard
TO-220AB
BTA/BTB06-xxxCW
X
X
35 mA
Snubberless
TO-220AB
BTA/BTB06-xxxSW
X
X
10 mA
Logic level
TO-220AB
BTA/BTB06-xxxTW
X
X
5 mA
Logic level
TO-220AB
Part Number
Marking
Weight
Base
quantity
Packing
mode
BTA/BTB06-xxxyz
BTA/BTB06-xxxyz
2.3 g
250
Bulk
BTA/BTB06-xxxyzRG
BTA/BTB06-xxxyz
2.3 g
50
Tube
BT A 06 - 600 BW (RG)
TRIAC
SERIES
INSULATION:
A: insulated
B: non insulated
CURRENT: 6A
SENSITIVITY & TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
TW: 5mA LOGIC LEVEL
VOLTAGE:
600: 600V
800: 800V
PACKING MODE
Blank: Bulk
RG: Tube
BTA/BTB06 Series
4/6
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2: RMS on-state current versus case
temperature (full cycle).
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: On-state characteristics (maximum
values).
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of It.
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
8
P (W)
IT(RMS)(A)
0
25
50
75
100
125
0
1
2
3
4
5
6
7
IT(RMS) (A)
BTA
BTB
Tc(C)
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1E-2
1E-1
1E+0
K=[Zth/Rth]
Zth(j-c)
Zth(j-a)
tp(s)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
ITM (A)
Tj=Tj max
Tj max.
Vto = 0.85 V
Rd = 60 m
VTM(V)
1
10
100
1000
0
10
20
30
40
50
60
70
ITSM (A)
Non repetitive
Tj initial=25C
Repetitive
Tc=105C
One cycle
t=20ms
Number of cycles
0.01
0.10
1.00
10.00
10
100
1000
tp (ms)
ITSM (A), It (As)
Tj initial=25C
ITSM
It
dI/dt limitation:
50A/s
BTA/BTB06 Series
5/6
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Snubberless & Logic Level Types
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Standard Types
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
-40
-20
0
20
40
60
80
100
120
140
0.0
0.5
1.0
1.5
2.0
2.5
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C]
IGT
IH & IL
Tj(C)
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
BW/CW
SW
TW
(dV/dt)c (V/s)
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
C
B
(dV/dt)c (V/s)
0
25
50
75
100
125
0
1
2
3
4
5
6
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Tj(C)