BTA06 GP
March 1995
TRIACS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
conduction angle)
Tc = 105
C
6
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp = 8.3 ms
105
A
tp = 10 ms
100
I2t
I2t value
tp = 10 ms
50
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/
s
Repetitive
F = 50 Hz
10
A/
s
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
C
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
C
TO220AB
(Plastic)
A1
A2
G
.
LOW I
H
= 13mA max
.
HIGH SURGE CURRENT : I
TSM
= 100A
.
I
GT
SPECIFIED IN FOUR QUADRANTS
.
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
BTA06-
Unit
400 GP
600 GP
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
C
400
600
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTA06 GP's use high performance, glass pas-
sivated chips.
The insulated TO220AB package, the high surge
current and low holding current make this family
well adapted to LIGHT DIMMER applications.
1/4
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
C/W
Rth (j-c) DC Junction to case for DC
4
C/W
Rth (j-c) AC Junction to case for 360
conduction angle
( F= 50 Hz)
3
C/W
Symbol
Test Conditions
Quadrant
Suffix
Unit
GP
IGT
VD=12V
(DC)
RL=33
Tj=25
C
I-II-III
MAX
50
mA
IV
MAX
75
VGT
VD=12V
(DC)
RL=33
Tj=25
C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj=110
C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM IG = 500mA
dIG/dt = 3A/
s
Tj=25
C
I-II-III-IV
TYP
2
s
IL
IG=1.2 IGT
Tj=25
C
I-III- IV
TYP
20
mA
II
40
IH *
IT= 100mA gate open
Tj=25
C
MAX
13
mA
VTM *
ITM= 8.5A tp= 380
s
Tj=25
C
MAX
1.4
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
C
MAX
0.01
mA
Tj=110
C
MAX
0.5
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=110
C
MIN
30
V/
s
TYP
100
(dV/dt)c *
(dI/dt)c= 1.8A/ms
Tj=110
C
MIN
1
V/
s
TYP
10
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
PG (AV) = 1W
PGM = 10W (tp = 20
s)
IGM = 4A (tp = 20
s)
VGM = 16V (tp = 20
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA06 GP
2/4
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
180
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
T(RMS)
I
(A)
P(W)
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(curves are cut off by (dI/dt)c limitation)
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
-105
-110
-115
-120
-125
P (W)
Rth = 0 C/W
2.5 C/W
5 C/W
10 C/W
o
o
o
o
Tamb ( C)
o
Tcase ( C)
o
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact.
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0
1
2
3
4
5
6
7
= 180
o
Tcase ( C)
o
I
(A)
T(RMS)
Fig.3 : RMS on-state current versus case temperature.
1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
0.01
0.1
1
Zth/Rth
Zt h( j-c )
Zt h( j-a )
tp (s )
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
BTA06 GP
3/4
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal
pulse
with
width
:
t
10ms,
and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
I
=
=
A
G
D
B
C
F
P
N
O
M
L
J
H
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
10.20
10.50
0.401
0.413
B
14.23
15.87
0.560
0.625
C
12.70
14.70
0.500
0.579
D
5.85
6.85
0.230
0.270
F
4.50
0.178
G
2.54
3.00
0.100
0.119
H
4.48
4.82
0.176
0.190
I
3.55
4.00
0.140
0.158
J
1.15
1.39
0.045
0.055
L
0.35
0.65
0.013
0.026
M
2.10
2.70
0.082
0.107
N
4.58
5.58
0.18
0.22
O
0.80
1.20
0.031
0.048
P
0.64
0.96
0.025
0.038
PACKAGE MECHANICAL DATA
TO220AB
Plastic
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-TH OMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express writt en approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
BTA06 GP
4/4
PDF 
ZIP