BTA16 B
BTB16 B
March 1995
STANDARD TRIACS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
conduction angle)
BTA
Tc = 80
C
16
A
BTB
Tc = 90
C
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp = 8.3 ms
170
A
tp = 10 ms
160
I2t
I2t value
tp = 10 ms
128
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/
s
Repetitive
F = 50 Hz
10
A/
s
Non
Repetitive
50
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
C
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
C
TO220AB
(Plastic)
A1
A2
G
.
HIGH SURGE CURRENT CAPABILITY
.
COMMUTATION : (dV/dt)c > 10V/
s
.
BTA Family :
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
BTA / BTB16-... B
Unit
400
600
700
800
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
C
400
600
700
800
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTA/BTB16 B triac family are high perform-
ance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where high surge current capability is re-
quired. Application such as phase control and
static switching on inductive or resistive load.
1/5
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
C/W
Rth (j-c) DC Junction to case for DC
BTA
2.9
C/W
BTB
2.3
Rth (j-c) AC Junction to case for 360
conduction angle
( F= 50 Hz)
BTA
2.2
C/W
BTB
1.75
Symbol
Test Conditions
Quadrant
Suffix
Unit
B
IGT
VD=12V
(DC)
RL=33
Tj=25
C
I-II-III
MAX
50
mA
IV
MAX
100
VGT
VD=12V
(DC)
RL=33
Tj=25
C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj=125
C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM IG = 500mA
dIG/dt = 3A/
s
Tj=25
C
I-II-III-IV
TYP
2
s
IL
IG=1.2 IGT
Tj=25
C
I-III-IV
TYP
40
mA
II
70
IH *
IT= 500mA gate open
Tj=25
C
MAX
50
mA
VTM *
ITM= 22.5A tp= 380
s
Tj=25
C
MAX
1.6
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
C
MAX
0.01
mA
Tj=125
C
MAX
2
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=125
C
MIN
250
V/
s
(dV/dt)c *
(dI/dt)c = 7A/ms
Tj=125
C
MIN
10
V/
s
* For either polarity of electrode A2 voltage with reference to electrode A1.
PG (AV) = 1W
PGM = 10W (tp = 20
s)
IGM = 4A (tp = 20
s)
VGM = 16V (tp = 20
s).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA16 B / BTB16 B
2/5
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
Fig.4 : RMS on-state current versus case temperature.
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
0.01
0.1
1
Zth/Rth
Zt h( j-c )
Zt h(j-a)
tp( s)
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
BTA16 B / BTB16 B
3/5
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal
pulse
with
width
:
t
10ms,
and
corresponding value of I2t.
Fig.9 : On-state characteristics (maximum values).
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
BTA16 B / BTB16 B
4/5
PACKAGE MECHANICAL DATA
TO220AB
Plastic
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
I
=
=
A
G
D
B
C
F
P
N
O
M
L
J
H
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
10.20
10.50
0.401
0.413
B
14.23
15.87
0.560
0.625
C
12.70
14.70
0.500
0.579
D
5.85
6.85
0.230
0.270
F
4.50
0.178
G
2.54
3.00
0.100
0.119
H
4.48
4.82
0.176
0.190
I
3.55
4.00
0.140
0.158
J
1.15
1.39
0.045
0.055
L
0.35
0.65
0.013
0.026
M
2.10
2.70
0.082
0.107
N
4.58
5.58
0.18
0.22
O
0.80
1.20
0.031
0.048
P
0.64
0.96
0.025
0.038
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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BTA16 B / BTB16 B
5/5
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