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Электронный компонент: BTW67-600

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BTW67 and BTW69 Series
STANDARD
50A SCRs
April 2001 - Ed: 4
MAIN FEATURES:
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500V RMS), complying
with UL standards (file ref: E81734).
Symbol
Value
Unit
I
T(RMS)
50
A
V
DRM
/V
RRM
600 to 1200
V
I
GT
80
mA
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(180 conduction angle)
RD91
Tc = 70C
50
A
TOP3 Ins.
Tc = 75C
I
T(AV)
Average on-state current
(180 conduction angle)
RD91
Tc = 70C
32
A
TOP3 Ins.
Tc = 75C
I
TSM
Non repetitive surge peak on-state current
tp = 8.3 ms
Tj = 25C
610
A
tp = 10 ms
580
I
t
I
t Value for fusing
Tj = 25C
1680
A
2
S
dI/dt
Critical rate of rise of on-state current I
G
=
2 x I
GT
, tr
100 ns
F = 60 Hz
Tj = 125C
50
A/s
I
GM
Peak gate current
tp = 20 s
Tj = 125C
8
A
P
G(AV)
Average gate power dissipation
Tj = 125C
1
W
T
stg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
C
V
RGM
Maximum peak reverse gate voltage
5
V
RD91
(BTW67)
TOP3
(BTW69)
BTW67 and BTW69 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
THERMAL RESISTANCES
PRODUCT SELECTOR
ORDERING INFORMATION
OTHER INFORMATION
Note: xxx = voltage
Symbol
Test Conditions
Value
Unit
I
GT
V
D
= 12 V
R
L
= 33
MIN.
8
mA
MAX.
80
V
GT
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125C
MIN.
0.2
V
I
H
I
T
= 500 mA
Gate open
MAX.
150
mA
I
L
I
G
= 1.2 I
GT
MAX.
200
mA
dV/dt
V
D
= 67 % V
DRM
Gate open
Tj = 125C
MIN.
1000
V/s
V
TM
I
TM
= 100 A
tp = 380 s
Tj = 25C
MAX.
1.9
V
V
t0
Threshold voltage
Tj = 125C
MAX.
1.0
V
R
d
Dynamic resistance
Tj = 125C
MAX.
8.5
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25C
MAX.
10
A
Tj = 125C
5
mA
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to case (DC)
RD91 (Insulated)
1.0
C/W
TOP3 Insulated
0.9
R
th(j-a)
Junction to ambient
TOP3 Insulated
50
C/W
Part Number
Voltage (xxx)
Sensitivity
Package
600 V
800 V
1200 V
BTW67-xxx
X
X
X
80 mA
RD91
BTW69-xxx
X
X
X
80 mA
TOP3 Ins.
Part Number
Marking
Weight
Base Quantity
Packing mode
BTW67-xxx
BTW67xxx
20.0 g
25
Bulk
BTW69-xxx
BTW69xxx
4.5 g
120
Bulk
BTW67 and BTW69 Series
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Fig. 1: Maximum average power dissipation
versus average on-state current.
Fig. 2: Average and D.C. on-state current versus
case temperature.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.
Fig. 5:
Surge peak on-state current versus
number of cycles.
Fig. 6:
Non-repetitive surge
peak on-state
current
for
a
sinusoidal
pulse
with
width
tp < 10ms, and corresponding value of It.
BTW67 and BTW69 Series
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PACKAGE MECHANICAL DATA
RD91 (Plastic)
Fig.
7:
On-state
characteristics
(maximum
values).
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
40.00
1.575
A1
29.90
30.30
1.177
1.193
A2
22.00
0.867
B
27.00
1.063
B1
13.50
16.50
0.531
0.650
B2
24.00
0.945
C
14.00
0.551
C1
3.50
0.138
C2
1.95
3.00
0.077
0.118
E3
0.70
0.90
0.027
0.035
F
4.00
4.50
0.157
0.177
I
11.20
13.60
0.441
0.535
L1
3.10
3.50
0.122
0.138
L2
1.70
1.90
0.067
0.075
N1
33
43
33
43
N2
28
38
28
38
BTW67 and BTW69 Series
5/5
PACKAGE MECHANICAL DATA
TOP3 Ins.(Plastic)
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result from its use. No license is granted by implication or otherwise under any patent or patent rights of
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supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as
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