HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUF410
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
VERY HIGH SWITCHING SPEED
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
MOTOR CONTROL
DESCRIPTION
The BUF410 is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
INTERNAL SCHEMATIC DIAGRAM
March 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5 V)
850
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
15
A
I
CM
Collector Peak Current (t
p
< 5 ms)
30
A
I
B
Base Current
3
A
I
BM
Base Peak Current (t
p
< 5 ms)
4.5
A
P
tot
Total Dissipation at T
c
= 25
o
C
125
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max Operation Junction Temperature
150
o
C
1
2
3
TO-218
1/6
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max
1
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
V
CE
= 850 V
V
CE
= 850 V T
C
= 100
o
C
0.2
1
mA
mA
I
CEV
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 850 V
V
CE
= 850 V T
C
=100
o
C
0.2
1
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 200 mA L = 25 mH
450
V
V
EBO
Emitter Base Voltage
(I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.5 A
I
C
= 5 A I
B
= 0.5 A T
C
=100
o
C
I
C
=10 A I
B
= 2 A
I
C
=10 A I
B
= 2 A T
C
=100
o
C
0.8
0.5
2.8
2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.5 A
I
C
= 5 A I
B
= 0.5 A T
C
=100
o
C
I
C
=10 A I
B
= 2 A
I
C
=10 A I
B
= 2 A T
C
=100
o
C
0.9
1.1
1.5
1.5
V
V
V
V
di
c
/dt
Rate of rise on-state
Collector Current
V
CC
= 300 V R
C
= 0 t
p
= 3
s
I
B1
= 0.75 A T
C
=25
o
C
I
B1
= 0.75 A T
C
=100
o
C
I
B1
= 3 A T
C
=100
o
C
45
100
60
A
/
s
A
/
s
A
/
s
V
CE
(3
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V R
C
= 60
I
B1
= 0.75 A T
C
=25
o
C
I
B1
= 0.75 A T
C
=100
o
C
2.1
8
V
V
V
CE
(5
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V R
C
= 60
I
B1
= 0.75 A T
C
=25
o
C
I
B1
= 0.75 A T
C
=100
o
C
1.1
4
V
V
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 5 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 1.2
V
clamp
= 400 V I
B1
= 0.5 A
L = 0.5 mH
0.8
0.05
0.08
s
s
s
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 5 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 1.2
V
clamp
= 400 V I
B1
= 0.5 A
L = 0.5 mH T
C
=100
o
C
1.8
0.1
0.18
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
I
C
= 5 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 1.2
I
B1
= 0.5 A L = 0.5 mH
T
C
= 125
o
C
500
V
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 5 A V
CC
= 50 V
V
BB
= 0 R
BB
= 0.3
V
clamp
= 400 V I
B1
= 0.5 A
L = 0.5 mH
1.5
0.04
0.07
s
s
s
BUF410
2/6
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 5 A V
CC
= 50 V
V
BB
= 0 R
BB
= 0.3
V
clamp
= 400 V I
B1
= 0.5 A
L = 0.5 mH T
C
=100
o
C
3
0.15
0.25
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
I
C
= 5 A V
CC
= 50 V
V
BB
= 0 R
BB
= 0.3
I
B1
= 0.5 A L = 0.5 mH
T
C
= 125
o
C
500
V
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= -5 V R
BB
=1.2
V
clamp
= 400 V I
B1
= 2 A
L = 0.25 mH
1.9
0.06
0.12
s
s
s
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= - 5 V R
BB
=1.2
V
clamp
= 400 V I
B1
= 2 A
L = 0.25 mH T
C
=100
o
C
3.2
0.12
0.3
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
I
CWoff
= 15 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 1.2
L = 0.1 mH I
B1
= 3 A
T
C
=125
o
C
400
V
Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
BUF410
3/6
Turn-off SwitchingTest Waveforms (inductive load).
Forward Biased Safe Operating Areas.
Reverse Biased Safe Operating Area
Storage Time Versus Pulse Time.
Turn-on Switching Test Waveforms.
BUF410
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
0.708
L5
3.95
4.15
0.155
0.163
L6
31
1.220
R
12.2
0.480
4
4.1
0.157
0.161
R
A
C
D
E
H
F
G
L6
L3
L2
L5
1 2 3
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUF410
5/6
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