BUH1015
BUH1015HI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPES
s
HIGH VOLTAGE CAPABILITY
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
DESCRIPTION
The BUH1015 and BUH1015HI are manufactured
using
Multiepitaxial
Mesa
technology
for
cost-effective high performance and use a Hollow
Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
December 1999
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Un it
V
CBO
Collect or-Base Voltage (I
E
= 0)
1500
V
V
CEO
Collect or-Emitter Volt age (I
B
= 0)
700
V
V
EBO
Emitter-Base Volt age (I
C
= 0)
10
V
I
C
Collect or Current
14
A
I
CM
Collect or Peak Current (t
p
< 5 ms)
18
A
I
B
Base Current
8
A
I
BM
Base Peak Current (t
p
< 5 ms)
11
A
P
tot
T otal Dissipation at T
c
= 25
o
C
160
70
W
T
s tg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction T emperature
150
o
C
1
2
3
TO-218
ISOWATT218
1
2
3
1/8
THERMAL DATA
TO -218 ISOW AT T218
R
t hj-ca se
Thermal Resistance Junction-case
Max
0.78
1.8
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
V
CE
= 1500 V
T
j
= 125
o
C
0.2
2
mA
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5 V
100
A
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
700
V
V
EBO
Emitt er-Base Voltage
(I
C
= 0)
I
E
= 10 mA
10
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 10 A
I
B
= 2 A
1.5
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 10 A
I
B
= 2 A
1.5
V
h
FE
DC Current G ain
I
C
= 10 A
V
CE
= 5 V
I
C
= 10 A
V
CE
= 5 V
T
j
= 100
o
C
7
5
10
14
t
s
t
f
RESI STIVE LO AD
St orage Time
Fall T ime
V
CC
= 400 V
I
C
= 10 A
I
B1
= 2 A
I
B2
= -6 A
1.5
110
s
ns
t
s
t
f
INDUCTIVE LOAD
St orage Time
Fall T ime
I
C
= 10 A
f = 31250 Hz
I
B1
= 2 A
I
B2
= -6 A
V
c eflybac k
= 1200 sin
5
10
6
t
V
4
220
s
ns
t
s
t
f
INDUCTIVE LOAD
St orage Time
Fall T ime
I
C
= 6 A
f = 64 KHz
I
B1
= 1 A
V
beo ff
= - 2 V
V
c eflybac k
= 1100 sin
5
10
6
t
V
3.7
200
s
ns
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area For TO-218
Safe Operating Area For ISOWATT218
BUH1015/BUH1015HI
2/8
Thermal Impedance for TO-218
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance for ISOWATT218
DC Current Gain
Base Emitter Saturation Voltage
BUH1015/BUH1015HI
3/8
Power Losses at 64 KHz
Switching Time Inductive Load at 64KHz
(see figure 2)
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
T
j
= 100
o
C (line scan phase). On the other hand,
negative base current I
B2
must be provided the
transistor to turn off (retrace phase). Most of the
dissipation,
especially
in
the
deflection
application, occurs at switch-off so it is essential
to determine the value of I
B2
which minimizes
power losses, fall time t
f
and, consequently, T
j
. A
new set of curves have been defined to give total
power losses, t
s
and t
f
as a function of I
B1
at 64
KHz scanning frequencies for choosing the
optimum drive. The test circuit is illustrated in
figure 1.
The values of L and C are calculated from the
following equations:
1
2
L
(
I
C
)
2
=
1
2
C
(
V
CEfly
)
2
=
2
f
=
1
L
C
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION
Reverse Biased SOA
BUH1015/BUH1015HI
4/8
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
BUH1015/BUH1015HI
5/8
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