BUH2M20AP
HIGH VOLTAGE NPN SILICON
POWER TRANSISTOR
s
EXTRA HIGH VOLTAGE CAPABILITY
s
LOW OUTPUT CAPACITANCE
s
CHARACTERIZED FOR LINEAR MODE
OPERATION.
APPLICATIONS:
s
DESIGNED SPECIFICALLY FOR DYNAMIC
FOCUS IN CTV AND MONITOR.
DESCRIPTION
The BUH2M20AP is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
INTERNAL SCHEMATIC DIAGRAM
September 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
2000
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
1200
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
30
mA
I
CM
Collector Peak Current (t
p
< 5 ms)
40
mA
P
tot
Total Dissipation at T
c
= 25
o
C
20
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-220
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
6.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CE
= 2000 V
5
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 4 V
10
A
V
CEO
Collector-Emitter
Breakdown Voltage
IC = 1 mA
1200
V
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 10
A
5
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 2 mA I
B
= 400
A
5
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 2 mA I
B
= 400
A
2
V
h
FE
DC Current Gain
I
C
= 2 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
10
10
C
ob
Output Capacitance
V
CB
= 100 V I
C
= 0 f = 1MHz
3
pF
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
BUH2M20AP
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BUH2M20AP
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
.
BUH2M20AP
4/4
PDF 
ZIP