BUH315DFH
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
NEW Fully Plastic TO-220 for HIGH
VOLTAGE APPLICATIONS
s
HIGH VOLTAGE CAPABILITY ( > 1500 V )
s
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
s
NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
s
CREEPAGE DISTANCE PATH > 4 mm
APPLICATIONS
s
HORIZONTAL DEFLECTION FOR COLOUR
TVS
DESCRIPTION
The device is manufactured using Multiepitaxial
Mesa technology for cost-effective high
performance and uses a Hollow Emitter structure
to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
July 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
1500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
700
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
10
V
I
C
Collector Current
6
A
I
CM
Collector Peak Current (t
p
< 5 ms)
12
A
I
B
Base Current
3
A
I
BM
Base Peak Current (t
p
< 5 ms)
5
A
P
tot
Total Dissipation at T
c
= 25
o
C
40
W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
2500
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
TO-220FH
1/7
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
3.125
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1500 V
200
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
300
mA
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 3 A I
B
= 1 A
1.5
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 3 A I
B
= 1 A
1.5
V
h
FE
DC Current Gain
I
C
= 3 A V
CE
= 5 V
I
C
= 3 A V
CE
= 5 V T
j
= 100
o
C
4
2.5
9
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
= 400 V I
C
= 3 A
I
B1
= 1 A I
B2
= -1.5 A
1.8
200
2.7
300
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 3 A f = 15625 Hz
I
B1
= 1 A I
B2
= 1.5 A
V
ceflyback
= 1050 sin
5
10
6
t V
2.7
350
s
ns
V
F
Diode Forward Voltage
I
F
= 3 A
2.5
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
BUH315DFH
2/7
Derating Curve
Collector Emitter Saturation Voltage
Power Losses at 16 KHz
DC Current Gain
Base Emitter Saturation Voltage
Switching Time Inductive Load at 16KHz
(see figure 2)
BUH315DFH
3/7
Switching Time Resistive Load at 16 KHz
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
B1
has to be provided for the lowest gain h
FE
at
100
o
C (line scan phase). On the other hand,
negative base current I
B2
must be provided to
turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of I
B2
which
minimizes power losses, fall time t
f
and,
consequently, T
j
. A new set of curves have been
defined to give total power losses, t
s
and t
f
as a
function of I
B2
at 16 KHz scanning frequencies
the optimum negative drive. The test circuit is
illustrated in fig. 1.
Inductance L
1
serves to control the slope of the
negative base current I
B2
to recombine the
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
2
L
(
I
C
)
2
=
1
2
C
(
V
CEfly
)
2
=
2
f
=
1
L
C
Where I
C
= operating collector current, V
CEfly
=
flyback voltage, f= frequency of oscillation during
retrace.
BASE DRIVE INFORMATION
BUH315DFH
4/7
Figure 1: Inductive Load Switching Test Circuits.
Figure 2: Switching Waveforms in a Deflection Circuit
BUH315DFH
5/7
PDF 
ZIP