BUL1203EFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING (277 V HALF
BRIDGE AND 120 V PUSH-PULL
TOPOLOGIES)
DESCRIPTION
The BUL1203EFP is a new device manufactured
using Diffused Collector technology to enhance
switching speeds and tight h
FE
range while
maintaining a wide RBSOA.
Thanks to his structure it has an intrinsic
ruggedness which enables the transistor to
withstand a high collector current level during
Breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
INTERNAL SCHEMATIC DIAGRAM
September 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-BaseVoltage (I
E
= 0)
1200
V
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1200
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
550
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
9
V
I
C
Collector Current
5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
8
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
< 5 ms)
4
A
P
tot
Total Dissipation at T
c
= 25
o
C
36
W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
1500
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-220FP
1/7
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.47
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1200 V
100
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 550 V
100
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA L = 25 mH
550
V
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 10 mA
9
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 1 A
0.5
0.7
1.5
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 1 A
1.5
1.5
V
V
h
FE
DC Current Gain
I
C
= 1 mA V
CE
= 5 V
I
C
= 10 mA V
CE
= 5 V
I
C
= 0.8 A V
CE
= 3 V
I
C
= 2 A V
CE
= 5 V
10
10
14
9
32
28
t
on
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
I
C
= 2 A I
B1
= 0.4 A
I
B2
= -0.8 A tp = 30
s
V
CC
= 150 V (see figure 2)
2.5
0.2
0.5
3.0
0.3
s
s
s
E
ar
Repetitive Avalanche
Energy
L = 2 mH C = 1.8 nF
V
CC
= 50 V V
BE
= -5 V
(see figure 3)
6
mJ
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
BUL1203EFP
2/7
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Load Storage Time
Inductive Load Fall Time
BUL1203EFP
3/7
Figure 1: Inductive Load Switching Test Circuit
Reverse Biased Safe Operating Area
Figure 2: Resistive Load Switching Test Circuit
BUL1203EFP
4/7
PDF 
ZIP