BUL310FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
FULLY CHARACTERIZED AT 125
o
C
s
LARGE RBSOA
s
FULLY MOLDED ISOLATED PACKAGE
s
2000 V DC ISOLATION (U.L. COMPLIANT)
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL310FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
April 1998
TO-220FP
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CES
Collector-Emit ter Voltage (V
BE
= 0)
1000
V
V
CEO
Collector-Emit ter Voltage (IB = 0)
500
V
V
EBO
Emitter-Base Voltage (IC = 0)
9
V
I
C
Collector Current
5
V
I
CM
Collector Peak Current (t
p
<5 ms)
10
A
I
B
Base Current
3
A
I
BM
Base Peak Current (t
p
<5 ms)
4
A
P
t ot
Tot al Dissipation at T c = 25
o
C
36
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
1/6
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
3.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= 1000 V
V
CE
= 1000 V
T
j
= 125
o
C
100
500
A
A
I
CEO
Collect or Cut-off
Current (I
B
= 0)
V
EC
= 400 V
250
A
V
CEO (sus)
Collect or-Emitter
Sustaining Voltage
I
C
= 100 mA
L= 25 mH
500
V
V
EBO
Emitt er-Base Voltage
(I
C
= 0)
I
E
= 10 mA
9
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 1 A
I
B
= 0.2 A
I
C
= 2 A
I
B
= 0.4 A
I
C
= 3 A
I
B
= 0.6 A
0.5
0.7
1.1
V
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 1 A
I
B
= 0.2 A
I
C
= 2 A
I
B
= 0.4 A
I
C
= 3 A
I
B
= 0.6 A
1
1.1
1.2
V
V
V
h
FE
DC Current G ain
I
C
= 10 mA
V
CE
= 5 V
I
C
= 3 A
V
CE
= 2.5 V
10
10
t
s
t
f
INDUCTIVE LOAD
St orage Time
Fall T ime
I
C
= 2 A
I
B1
= 0.4 A
V
BE(of f)
= -5 V
R
BB
= 0
V
CL
= 250 V
L = 200
H
1.2
80
1.9
160
s
ns
t
s
t
f
INDUCTIVE LOAD
St orage Time
Fall T ime
I
C
= 2 A
I
B1
= 0.4 A
V
BE(of f)
= -5V
R
BB
= 0
V
CL
= 250 V
L = 200
H
T
j
= 125
o
C
1.8
150
s
ns
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL310FP
2/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
BUL310FP
4/6
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