BULD116D
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
APPLICATIONS:
s
COMPACT FLUORESCENT LAMPS UP TO
23 W AT 110 V A.C. MAINS
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
AT 110 V A.C. MAINS
DESCRIPTION
The device is manufactured using Multi Epitaxial
Planar technology for high switching speeds and
medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
September 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
400
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
200
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
9
V
I
C
Collector Current
5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
10
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
< 5 ms)
4
A
P
tot
Total Dissipation at T
c
= 25
o
C
20
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
3
2
1
IPAK
TO-251
("Suffix "-1")
1/6
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
6.25
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 400 V
V
CE
= 400 V T
j
= 125
o
C
100
500
A
A
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 10 mA
9
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA L = 25 mH
200
V
I
CEO
Collector-Emitter
Leakage Current
V
CE
= 200 V
250
A
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 50 mA
I
C
= 1 A I
B
= 0.1 A
I
C
= 3 A I
B
= 0.6 A
I
C
= 5 A I
B
= 1 A
0.25
0.4
0.7
1.2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.1 A
I
C
= 5 A I
B
= 1 A
1.1
1.5
V
V
h
FE
DC Current Gain
I
C
= 10 mA V
CE
= 5 V
I
C
= 5 A V
CE
= 5 V
10
8
20
t
r
t
f
t
s
RESISTIVE LOAD
Rise Time
Fall Time
Storage Time
V
CC
= 125 V I
C
= 2 A
I
B1
= 0.4 A I
B2
= -0.4 A
t
p
= 30
s (see figure 2)
0.2
0.2
1.4
0.4
s
s
s
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A I
B1
= 0.4 A
V
BE
= -5 V L = 500
H
V
clamp
= 180 V (see figure 1)
0.5
0.10
s
s
V
F
Diode Forward Voltage I
C
= 2 A
1.5
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Derating Curve
BULD116D
2/6
DC Current Gain
Collector-Emitter Saturation Voltage
Switching Time Resistive Load
DC Current Gain
Base-Emitter Saturation Voltage
Switching Time Inductive Load
BULD116D
3/6
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
1) Fast electronic switch
2) Non-inductive Resistor
Reverse Biased SOA
BULD116D
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
0.033
B5
0.30
0.012
B6
0.95
0.037
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
0.047
L2
0.80
1.00
0.031
0.039
V1
10
o
10
o
P032N_E
TO-251 (IPAK) MECHANICAL DATA
BULD116D
5/6
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