BULK128D-B
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
August 2001
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
700
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
400
V
V
EBO
Emitter-Base Voltage
(I
C
= 0, I
B
= 2 A, t
p
< 10
s, T
j
< 150
o
C)
BV
EBO
V
I
C
Collector Current
4
A
I
CM
Collector Peak Current (t
p
< 5 ms)
8
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
< 5 ms)
4
A
P
tot
Total Dissipation at T
c
= 25
o
C
55
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
SOT-82
1/7
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
2.27
80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= -1.5 V)
V
CE
= 700 V
V
CE
= 700 V T
C
= 125
o
C
100
500
A
A
I
CEO
Collector-Emitter
Leakage Current
(I
B
= 0)
V
CE
= 400 V
250
A
BV
EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10 mA
9
18
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA L = 25 mH
400
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 0.1 A
I
C
= 1 A I
B
= 0.2 A
I
C
= 2.5 A I
B
= 0.5 A
0.7
1
1.5
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 0.1 A
I
C
= 1 A I
B
= 0.2 A
I
C
= 2.5 A I
B
= 0.5 A
1.1
1.2
1.3
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA V
CE
= 5 V
I
C
= 2 A V
CE
= 5 V
10
8
40
V
f
Forward Voltage Drop
I
f
= 2 A
2.5
V
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
= 250 V I
C
= 2 A
I
B1
= 0.4 A I
B2
= -0.4 A
T
p
= 30
s (see fig. 2)
2
0.2
2.9
s
s
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
V
CC
= 200 V I
C
= 2 A
I
B1
= 0.4 A V
BE(off)
= -5 V
R
BB
= 0
L = 200
H
(see fig. 1)
0.6
0.1
s
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BULK128D-B
2/7
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
1) Fast electronic switch
2) Non-inductive Resistor
BULK128D-B
5/7
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