BUT32V
NPN TRANSISTOR POWER MODULE
s
HIGH CURRENT POWER BIPOLAR MODULE
s
VERY LOW R
th
JUNCTION CASE
s
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s
ISOLATED CASE (2500V RMS)
s
EASY TO MOUNT
s
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
DC/DC & DC/AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
September 1997
ISOTOP
Pin 4 not connected
ABSOLUTE MAXIMUM RATINGS
Symbol
Parame ter
Value
Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -5 V)
400
V
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0)
300
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
80
A
I
CM
Collector Peak Current (t
p
= 10 ms)
120
A
I
B
Base Current
16
A
I
BM
Base Peak Current (t
p
= 10 ms)
24
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
250
W
T
stg
Storage Temperature
-55 to 150
o
C
T
j
Max. Ope ra ting Ju nction Temperature
150
o
C
V
I SO
Insulation Withstand Voltage (AC-RMS)
2500
o
C
1/7
THERMAL DATA
R
thj-ca se
R
t hc-h
Thermal Resistance Ju nction- case
Max
Thermal Resistance Case-heatsin k With Conductive
Grease Applied
Max
0.5
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collecto r Cu t-of f
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1
5
mA
mA
I
CEV
Collecto r Cu t-of f
Current (V
BE
= -5)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1
4
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(SUS)
* Collecto r-Emitter
Sustaining Voltage
I
C
= 0.2 A
L = 25 mH
V
c lamp
= 300 V
300
V
h
FE
DC Current Gain
I
C
= 40 A
V
CE
= 5 V
16
V
CE(sat )
Collecto r-Emitter
Satu ration Vo ltage
I
C
= 40 A
I
B
= 4 A
I
C
= 40 A
I
B
= 4 A
T
j
= 100
o
C
0.6
1.2
0. 9
1. 9
V
V
V
BE( sat)
Base-Emitter
Satu ration Vo ltage
I
C
= 40 A
I
B
= 4 A
I
C
= 40 A
I
B
= 4 A
T
j
= 100
o
C
1.12
1.1
1. 3
1. 3
V
V
di
C
/dt
Rate of Rise of
On-state Collector
V
CC
= 3 00 V
R
C
= 0
t
p
= 3
s
I
B1
= 6 A
T
j
= 100
o
C
120
180
A/
s
V
CE
(3
s) Collecto r-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 6 .2
I
B1
= 6 A
T
j
= 1 00
o
C
3
6
V
V
CE
(5
s) Collecto r-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 6 .2
I
B1
= 6 A
T
j
= 1 00
o
C
1.8
3
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross-over Time
I
C
= 40 A
V
CC
= 250 V
V
BB
= -5 V
R
BB
=
0.6
V
c lamp
= 300 V
I
B1
= 4 A
L = 0. 3 mH
T
j
= 100
o
C
1.9
0.12
0.35
3
0. 4
0. 7
s
s
s
V
CEW
Maximu m Collector
Emitter Voltage
With ou t Snubber
I
CW off
= 60 A
I
B1
= 4 A
V
BB
= -5 V
V
CC
= 5 0 V
L = 42
H
R
BB
= 0.6
T
j
= 1 25
o
C
300
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUT32V
2/7
Safe Operating Areas
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance
Collector-emitter Voltage Versus
base-emitter Resistance
Base-Emitter Saturation Voltage
BUT32V
3/7
Reverse Biased SOA
Reverse Biased AOA
Switching Times Inductive Load
Foward Biased SOA
Forward Biased AOA
Switching Times Inductive Load Versus
Temperature
BUT32V
4/7
(1) Fast electronics switch
(2) Non-inductive load
Dc Current Gain
Turn-on Switching Test Circuit
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
(1) Fast electronic switch
(2) Non-inductive load
(3) Fast recovery rectifier
Turn-off Switching Waveforms
BUT32V
5/7
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