BUV46
BUV46A
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
NPN TRANSISTORS
s
HIGH VOLTAGE CAPABILITY
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
FAST SWITCHING SPEED
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
SWITCH MODE POWER SUPPLIES
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The devices are silicon Multiepitaxial Mesa NPN
transistors in the Jedec TO-220 plastic package
intended for high voltage, fast switching
applications.
INTERNAL SCHEMATIC DIAGRAM
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BUV46
BUV46A
V
CES
Collector-Emitter Voltage (V
BE
= 0)
850
1000
V
V
CEX
Collector-Emitter Voltage (V
BE
= -2.5V)
850
1000
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
400
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
5
A
I
B
Base Current
3
A
P
tot
Total Dissipation at Tc = 25
o
C
70
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-220
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max
1.76
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
V
CE
= V
CEX
V
CE
= V
CEX
T
C
= 125
o
C
0.1
1
mA
mA
I
CEX
Collector Cut-off
Current
V
CE
= V
CEX
V
BE
= -2.5 V
V
CE
= V
CEX
V
BE
= -2.5 V T
C
= 125
o
C
0.3
2
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
BE
= 7 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 100 mA for BUV46
for BUV46A
400
450
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
for BUV46
I
C
= 2.5 A I
B
= 0.5 A
I
C
= 3.5 A I
B
= 0.7 A
for BUV46A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.6 A
1.5
5
1.5
5
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
for BUV46
I
C
= 2.5 A I
B
= 0.5 A
for BUV46A
I
C
= 2 A I
B
= 0.4 A
1.3
1.3
V
V
t
on
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
for BUV46
I
C
= 2.5 A V
CC
= 150 V
I
B1
= - I
B2
= 0.5 A
1
3
0.8
s
s
s
t
on
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
for BUV46A
I
C
= 2 A V
CC
= 150 V
I
B1
= - I
B2
= 0.4 A
1
3
0.8
s
s
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUV46 / BUV46A
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BUV46 / BUV46A
3/4
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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4/4
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