BUX10
HIGH POWER NPN SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
APPLICATIONS
s
MOTOR CONTROL
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX10 is a silicon multiepitaxial planar NPN
transistor in Jedec TO-3 metal case, intended for
use in switching and linear applications in military
and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
July 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-base Voltage (I
E
= 0)
160
V
V
CEX
Collector-emitter Voltage (V
BE
= - 1.5V)
160
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
125
V
V
EBO
Emitter-base Voltage (Ic = 0)
7
V
I
C
Collector Current
25
A
I
CM
Collector Peak Current (t
P
= 10 ms)
30
A
I
B
Base Current
5
A
P
tot
Total Power Dissipation at T
ca se
25
o
C
150
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max Operating Junction Temperature
200
o
C
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.17
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 100 V
1.5
mA
I
CEX
Collector Cut-off
Current
V
CE
= 160 V V
BE
= -1.5V
T
case
= 125
o
C
V
CE
= 160 V V
BE
= -1.5V
1.5
6
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 200 mA
125
V
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10 A I
B
= 1 A
I
C
= 20 A I
B
= 2 A
0.3
0.7
0.6
1.2
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 20 A I
B
= 2 A
1.6
2
V
h
FE
DC Current Gain
I
C
= 10 A V
CE
= 2 V
I
C
= 20 A V
CE
= 4 V
20
10
60
I
S/b
Second Breakdown
Collector Current
V
CE
= 30 V t = 1 s
V
CE
= 48 V t = 1 s
5
1
A
A
f
T
Transistor Frequency
I
C
= 1 A V
CE
=15 V
f = 10MHz
8
MHz
t
on
Turn-on Time
I
C
= 20 A I
B1
= 2 A
V
CC
= 30V
0.5
1.5
s
t
s
t
f
Storage Time
Fall Time
I
C
= 20 A I
B1
= - I
B2
= 2A
V
CC
= 30V
0.6
0.15
1.2
0.3
s
s
Clamped E
s/b
Collector Current
V
clamp
=125 V
L = 500
H
20
A
Pulsed: Pulse duration = 300
s, duty cycle
2 %
BUX10
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003F
TO-3 MECHANICAL DATA
BUX10
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BUX10
4/4
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