BUX98
BUX98A
HIGH POWER NPN SILICON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
APPLICATIONS
s
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX98 and BUX98A are silicon multiepitaxial
mesa NPN transistor in jedec TO-3 metal case,
intended and industrial applications from single
and three-phase mains operation.
INTERNAL SCHEMATIC DIAGRAM
July 1997
1
2
TO-3
(version R)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BUX98
BUX98A
V
CER
Collector-Emitter Voltage (RBE =
10
)
850
1000
V
V
CES
Collector-Base Voltage (V
BE
= 0)
850
1000
V
V
CEO
Collector-Emitter Voltage (IB = 0)
400
450
V
V
EBO
Emitter-Base Voltage (IC = 0)
7
V
I
C
Collector Current
30
A
I
CM
Collector Peak Current (tp < 5 ms)
60
A
I
CP
Collector Peak Current non Rep. (tp < 20
s)
80
A
I
B
Base Current
8
A
I
BM
Base Peak Current (t
p
< 5 ms)
30
A
P
tot
Total Power Dissipation at T
case
<
25
o
C
250
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max Operating Junction Temperature
200
o
C
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
V
CE
= V
CES
V
CE
= V
CES
T
CASE
= 125
o
C
1
8
A
mA
I
CES
Collector Cut-off
Current (V
BE
= 0 )
V
CE
= V
CES
V
CE
= V
CES
T
CASE
= 125
o
C
400
4
A
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= V
CEO
2
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 200 mA
for BUX98
for BUX98A
400
450
V
V
V
CER(sus)
Collector-Emitter
Sustaining Voltage
L = 2mH I
C
= 1 A
for BUX98
for BUX98A
850
1000
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
for BUX98
I
C
= 20 A I
B
= 4 A
for BUX98A
I
C
= 16 A I
B
= 3.2 A
I
C
= 24 A I
B
= 5 A
1.5
1.5
5
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
for BUX98
I
C
= 20 A I
B
= 4 A
for BUX98A
I
C
= 16 A I
B
= 3.2 A
1.6
1.6
V
V
t
on
Turn-on Time
for BUX98
1
s
t
s
Storage Time
V
CC
= 150 V I
C
= 20 A
3
s
t
f
Fall Time
I
B1
= - I
B2
= 4 A
0.8
s
t
on
Turn-on Time
for BUX98A
1
s
t
s
Storage Time
V
CC
= 150 V I
C
= 16 A
3
s
t
f
Fall Time
I
B1
= - I
B2
= 3.2 A
0.8
s
Pulsed: Pulse duration = 300
s, duty cycle = 1.5 %
BUX98 / BUX98A
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.7 0.460
B
0.96
1.10
0.037
0.043
C
1.70
0.066
D
8.7
0.342
E
20.0
0.787
G
10.9 0.429
N
16.9 0.665
P
26.2
1.031
R
3.88
4.09
0.152
0.161
U
39.50
1.555
V
30.10
1.185
E
B
R
C
D
A
P
G
N
V
U
O
P003N
TO-3 (version R) MECHANICAL DATA
BUX98 / BUX98A
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BUX98 / BUX98A
4/4
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