BUZ11A
N - CHANNEL 50V - 0.045
- 26A TO-220
STripFET
TM
MOSFET
s
TYPICAL R
DS(on)
= 0.045
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
HIGH CURRENT CAPABILITY
s
175
o
C OPERATING TEMPERATURE
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
July 1999
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
V
DS
Drain-source Voltage (V
GS
= 0)
50
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
50
V
V
GS
G ate-source Volt age
20
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
26
A
I
DM
Drain Current (pulsed)
104
A
P
tot
T otal Dissipat ion at T
c
= 25
o
C
75
W
T
s tg
Storage Temperature
-65 to 175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
DIN HUMIDI TY CAT EGORY (DI N 40040)
E
I EC CLIMAT IC CAT EG ORY (DI N IEC 68-1)
55/ 150/56
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
T YPE
V
DSS
R
DS(on)
I
D
BUZ11A
50 V
< 0. 055
26 A
1/8
THERMAL DATA
R
thj -case
R
thj -amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
1.67
62. 5
o
C/W
o
C/W
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Valu e
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
30
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 30V)
120
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
50
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
j
= 125
o
C
1
10
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
20 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 1 mA
2. 1
3
4
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
I
D
= 19 A
0.045
0.055
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
= 25 V
I
D
= 19 A
10
17
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1400
200
50
pF
pF
pF
SWITCHING
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(of f)
t
f
Turn-on Time
Rise Time
Turn-off Delay T ime
Fall T ime
V
DD
= 30 V
I
D
= 15 A
R
G S
= 4. 7
V
GS
= 10 V
18
95
50
20
ns
ns
ns
ns
BUZ11A
2/8
ELECTRICAL CHARACTERISTICS (continued)
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current
(pulsed)
26
104
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 60 A
V
GS
= 0
1. 8
V
t
rr
Q
rr
Reverse Recovery
Time
Reverse Recovery
Charge
I
SD
= 26 A
di/dt = 100 A/
s
V
DD
= 30 V
T
j
= 150
o
C
85
0.19
ns
C
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Thermal Impedance
BUZ11A
3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
BUZ11A
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
BUZ11A
5/8
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