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BYT200PIV-400
May 2000 - Ed: 3C
ULTRAFAST POWER RECTIFIER DIODE
I
F(AV)
2 x100 A
V
RRM
400 V
V
F
(max)
1.4 V
MAIN PRODUCT CHARACTERISTICS
n
LOW CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
HIGH AVALANCHE CAPABILITY
n
ISOLATED PACKAGE :
2500 V
DC
CAPACITANCE 42pF
FEATURES AND BENEFITS
High current power rectifier diode suited for
Switched Mode Power Supply and high frequency
DC to DC converters.
Packaged in ISOTOP, this device is intended
for use in a medi um v oltage high c urrent ap-
plic ations such as welding equ ipment and
Telec om su pplie s.
DESCRIPTION
ISOTOP
TM
1 = A1
2 = K1
3 = A2
4 = K2
3
4
2
1
A1
K1
A2
K2
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
400
V
I
F(RMS)
RMS forward current
150
A
I
F(AV)
Average forward current
Tc = 80
C
= 0.5
100
A
I
FSM
Surge non repetitive forward current
tp = 10 ms
Sinusoidal
600
A
I
FRM
Repetitive peak forward current
tp
10
s
800
A
T
stg
Storage temperature range
- 40 to + 150
C
Tj
Maximum junction temperature
150
C
ABSOLUTE MAXIMUM RATING
ISOTOP is a trademark of STMicroelectronics
BYT200PIV-400
2/5
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per leg
0.55
C/W
Total
0.33
R
th (c)
Coupling
0.1
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage current
Tj = 25
C
V
R
= V
RRM
120
A
Tj = 100
C
4
12
mA
V
F
**
Forward voltage drop
Tj = 25
C
I
F
= 100 A
1.6
V
Tj = 125
C
I
F
= 100 A
0.95
1.4
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 5 ms, duty cycle < 2 %
** tp = 380
s, duty cycle < 2%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery time
I
F
=0.5A
I
R
=1A
Irr=0.25A
I
F
=1A dI/dt= -50A/
s
Vr=30V
55
100
ns
I
RM
Reverse recovery current
dI
F
/dt=-200A/
s
Tj=125
C
V
R
=400V
I
F
=100A
40
A
S factor
Softness factor
dI
F
/dt=-200A/
s
Tj=125
C
V
R
=400V
I
F
=100A
0.25
t
fr
Forward recovery time
I
F
=100A
dI
F
/dt=500A/
s
Measured at 1.1 x V
F
max.
Tj=25
C
500
ns
V
FP
Peak forward voltage
12
V
To evaluate the conduction losses use the following equation :
P = 0.8 x I
F(AV)
+ 0.00228 x I
F
2
(RMS)
RECOVERY CHARACTERISTICS
BYT200PIV-400
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0
10 20 30 40 50 60 70 80 90 100 110 120 130
0
20
40
60
80
100
120
140
IF(av) (A)
PF(av)(W)
= 0.05
= 0.1
= 0.2
= 0.5
= 1
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
100
200
300
400
500
IM(A)
P=75W
P=150W
P=100W
P=125W
Fig. 2: Peak current versus form factor (per diode).
0
25
50
75
100
125
150
0
20
40
60
80
100
120
Tamb(
C)
IF(av)(A)
Rth(j-a)=2
C/W
Rth(j-a)=Rth(j-c)
Fig. 3: Average forward current versus ambient
temperature (
= 0.5, per diode).
1E-3
1E-2
1E-1
1E+0
0
100
200
300
400
500
600
700
t(s)
IM(A)
Tc=50
C
Tc=100
C
Tc=75
C
Fig. 4: Non repetitive surge peak forward current
versus overload duration (per diode).
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
tp(s)
K=[Zth(j-c)/Rth(j-c)]
= 0.5
= 0.2
= 0.1
Single pulse
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
1
10
100
500
VFM(V)
IFM(A)
Tj=25
C
Tj=125
C
Fig. 6: Forward voltage drop versus forward current
(maximum values, per diode).
BYT200PIV-400
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1
10
100
200
100
150
200
250
300
350
400
450
500
VR(V)
C(pF)
F=1MHz
Tj=25
C
Fig. 7: Junction capacitance versus reverse voltage
applied (typical values, per diode).
0
100
200
300
400
500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
dIF/dt(A/
s)
Qrr(
C)
IF=IF(av)
90% confidence
Tj=125
C
Fig. 8: Recovery charges versus dIF/dt (per diode).
0
100
200
300
400
500
0
5
10
15
20
25
30
35
40
45
50
dIF/dt(A/
s)
IRM(A)
IF=IF(av)
90% confidence
Tj=125
C
Fig. 9: Recovery current versus dIF/dt (per diode).
0
100
200
300
400
500
600
700
800
0
2
4
6
8
10
12
14
dIF/dt(A/
s)
VFP(V)
IF=IF(av)
90% confidence
Tj=125
C
Fig. 10: Transient peak forward voltage versus
dIF/dt (per diode).
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
Tj(
C)
Qrr;IRM[Tj] / Qrr;IRM[Tj=125
C]
IRM
Qrr
Fig. 11: Dynamic parameters versus junction
temperature.
BYT200PIV-400
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2000 STMicroelectronics - Printed in Italy - All rights reserved.
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PACKAGE MECHANICAL DATA
ISOTOP
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
n
Epoxy meets UL94, V0
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