BYV52/PI
October 1999
Ed : 2C
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SOT93
(Plastic)
BYV52-200
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
DESCRIPTION
FEATURES
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, or TOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
isolated
TOP3I
(Plastic)
BYV52PI-200
Symbol
Parameter
Value
Unit
I
F(RMS)
RMS forward current
Per diode
50
A
I
F(AV)
Average forward current
= 0.5
SOT93
Tc=110
C
Per diode
30
A
TOP3I
Tc=90
C
Per diode
30
I
FSM
Surge non repetitive forward current
tp=10ms
sinusoidal
Per diode
500
A
Tstg
Tj
Storage and junction temperature range
- 40 to + 150
- 40 to + 150
C
C
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
A1
K
A2
1/6
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
I
R
*
T
j
= 25
C
V
R
= V
RRM
25
A
T
j
= 100
C
2.5
mA
V
F **
T
j
= 125
C
I
F
= 20 A
0.85
V
T
j
= 125
C
I
F
= 40 A
1.00
T
j
= 25
C
I
F
= 40 A
1.15
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380
s, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x I
F(AV)
+ 0.0075 x I
F
2
(RMS)
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
trr
T
j
= 25
C
I
F
= 0.5A
I
R
= 1A
Irr = 0.25A
35
ns
I
F
= 1A
V
R
= 30V
dI
F
/dt = -50A/
s
50
tfr
T
j
= 25
C
I
F
= 1A
V
FR
= 1.1 x V
F
tr = 5 ns
10
ns
V
FP
T
j
= 25
C
I
F
= 1A
tr = 5 ns
1.5
V
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
SOT93
Per diode
1.2
C/W
Total
0.75
TOP3I
Per diode
1.8
Total
1.2
Rth (c)
Coupling
SOT93
0.3
C/W
TOP3I
0.6
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCE
BYV52/PI
2/6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0
50
100
150
200
250
300
350
400
450
500
P=10W
T
I
M
=tp/T
tp
IM(A)
P=20W
P=30W
Fig.2 : Peak current versus form factor.
Tj= 125 C
o
IFM(A)
0.1
1
10
100
300
VFM(V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Fig.3 : Forward voltage drop versus forward
current (maximum values).
0.1
1.0
0.2
0.5
Zth(j-c) (tp.
)
K =
Rth(j-c)
= 0 . 5
= 0 . 2
= 0 .1
Singl e puls e
tp(s)
T
=tp/T
tp
1.0E-03
1.0E-02
1.0E-01
1. 0E+00
K
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
40
=0.05
=0.1
=0.2
=0.5
=1
T
=tp/T
tp
IF(av)(A)
PF(av)(W)
Fig.1 : Average forward power dissipation versus
average forward current.
0.001
0.01
0.1
1
0
50
100
150
200
250
Tc=25 C
o
Tc=50 C
o
IM
t
=0.5
t(s)
IM(A)
Tc=90 C
o
Fig.6 : Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
0.001
0.01
0.1
1
0
50
100
150
200
250
300
Tc=25 C
o
Tc=50 C
o
Tc=110 C
o
IM
t
=0.5
t(s)
IM(A)
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
(SOD93)
BYV52/PI
3/6
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
35
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
Fig.7
:
Average
current
versus
ambient
temperature.
(duty cycle : 0.5) (SOD93)
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
30
35
T
=tp/T
tp
=0.5
F(av)(A)
I
o
Tamb( C)
Rth(j-a)=15
C/W
o
Rth(j-a)=Rth(j-c)
Fig.8
:
Average
current
versus
ambient
temperature.
(duty cycle : 0.5) (TOP3I)
1
1 0
1 00
1 00
11 0
1 20
1 30
1 40
1 50
1 60
1 70
1 80
1 90
20 0
2 00
VR(V)
F=1Mhz Tj=25 C
o
C(pF)
Fig.9 : Junction capacitance versus reverse
voltage applied (Typical values).
1
10
100
0
10
20
30
40
50
60
70
80
90
1 00
QRR(nC)
90%CONFIDENCE
IF=IF(av)
Tj=100 C
O
Tj=25 C
O
dIF/dt(A/us)
Fig.10 : Recovery charges versus dI
F
/dt.
Tj(
C)
QRR ;IRM[Tj]/QRR ;IRM[Tj=125 C]
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
IRM
QRR
o
o
Fig.12 : Dynamic parameters versus junction
temperature.
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
20
IRM(A)
dIF/dt(A/us)
90%CONFIDENCE
Tj=100 C
O
Tj=25 C
O
IF=IF(av)
Fig.11 : Peak reverse current versus dIF/dt.
BYV52/PI
4/6
PACKAGE MECHANICAL DATA
SOD93
Marking : Type number
Cooling method : C
Weight : 3.79 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
REF.
DIMENSIONS
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
4.70
4.90 0.185
0.193
C
1.17
1.37 0.046
0.054
D
2.50
0.098
D1
1.27
0.050
E
0.50
0.78 0.020
0.031
F
1.10
1.30 0.043
0.051
F3
1.75
0.069
G
10.80
11.10 0.425
0.437
H
14.70
15.20 0.578
0.598
L
12.20
0.480
L2
16.20
0.638
L3
18.0
0.709
L5
3.95
4.15 0.156
0.163
L6
31.00
1.220
O
4.00
4.10 0.157
0.161
BYV52/PI
5/6
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