August 2006
Rev 3
1/13
13
STD16NE10L
N-channel 100V - 0.07
- 16A - DPAK
STripFETTM Power MOSFET
General features
Avalanche rugged technology
Low gate charge
High current capability
175C operating temperature
Low threshold drive
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
Internal schematic diagram
Type
V
DSSS
R
DS(on)
I
D
STD16NE10L
100V
<0.10
16A
1
3
DPAK
www.st.com
Order codes
Part number
Marking
Package
Packaging
STD16NE10LT4
D16NE10L
DPAK
Tape & reel
Contents
STD16NE10L
2/13
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD16NE10L
Electrical ratings
3/13
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DS
Drain-source voltage (V
GS
= 0)
100
V
V
DGR
Drain-gate voltage (R
GS
= 20K
)
100
V
V
GS
Gate-source voltage
20
V
I
D
Drain current (continuous) at T
C
= 25C
16
A
I
D
Drain current (continuous) at T
C
=100C
11
A
I
DM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
64
A
P
TOT
Total dissipation at T
C
= 25C
90
W
Derating factor
0.6
W/C
E
AS
(2)
2.
Starting T
J
= 25
o
C, I
D
= 8A, V
DD
= 30V
Single pulse avalanche energy
75
mJ
dv/dt
(3)
3.
I
SD
16A, di/dt
300 A/s, V
DS
V
(BR)DSS
, T
J
T
JMAX
Peak diode recovery voltage slope
7
V/ns
T
stg
Storage temperature
-55 to 175
C
T
J
Max. operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
Value
Unit
R
thJC
Thermal resistance junction-case Max
1.67
C/W
R
thJA
Thermal resistance junction-ambient Max
100
C/W
T
l
Maximum lead temperature for soldering
purpose
275
C
Electrical characteristics
STD16NE10L
4/13
2 Electrical
characteristics
(T
CASE
= 25C unless otherwise specified)
Table 3.
On
(1)
/off states
1.
Pulsed: Pulse duration = 300 s, duty cycle 1.5%
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250
A, V
GS
= 0
100
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125C
1
10
A
A
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= 20V
100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250A
1
1.7
2.5
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 8A
V
GS
= 5V, I
D
= 8A
0.07
0.085
0.085
0.01
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
1.
Pulsed: pulse duration=300s, duty cycle 1.5%
Forward transconductance
V
DSv
> I
D(on)
x R
DS(on)max
I
D
= 8A
5
9
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
1750
165
45
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 80V, I
D
= 16A
V
GS
= 5V
24
5.5
11
32
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 50V, I
D
= 8A,
R
G
= 4.7
, V
GS
= 4.5V
Figure 12 on page 8
40
80
45
12
ns
ns
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
clamp
= 80 V, I
D
= 16 A
R
G
= 4.7
, V
GS
= 4.5 V
(Inductive Load, Figure 5)
12
17
35
ns
ns
ns
STD16NE10L
Electrical characteristics
5/13
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
I
SD
Source-drain current
16
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
64
A
V
SD
(2)
2.
Pulsed: pulse duration=300s, duty cycle 1.5%
Forward on voltage
I
SD
= 16A, V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 16A,
di/dt = 100A/s,
V
DD
= 40V, T
J
= 150C
Figure 14 on page 8
100
300
6
ns
C
A
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