D44H8
D44H11
NPN SILICON POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
LOW COLLECTOR-EMITTER SATURATION
VOLTAGE
s
FAST SWITCHING SPEED
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The
D44H8,
and
D44H11
are
silicon
multiepitaxial planar NPN transistors mounted in
Jedec TO-220 plastic package.
They are inteded for various switching and
general purpose applications.
D44H8, D44H11 are complementary with D45H8,
D45H11.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
D44H8
D44H11
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
60
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
10
A
I
CM
Collector Peak Current
20
A
P
t ot
Tot al Dissipation at T
c
25
o
C
50
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
1/5
THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CB
= rated V
CEO
10
A
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5V
100
A
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
I
C
= 100 mA
for D44H8
for D44H11
60
80
V
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 8 A
I
B
= 0.4 A
1
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 8 A
I
B
= 0.8 A
1.5
V
h
FE
DC Current G ain
I
C
= 2 A
V
CE
= 1 V
I
C
= 4 A
V
CE
= 1 V
60
40
Pulsed: Pulse duration = 300
s, duty cycle
2 %
Safe Operating Area
Derating Curves
D44H8/D44H11
2/5
DC Current Gain
Collector-Emitter Saturation Voltage
DC Current Gain
Base-Emitter Saturation Voltage
D44H8/D44H11
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
D44H8/D44H11
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
D44H8/D44H11
5/5
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