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PRELIMINARY DATA
November, 20 2002
DB-900-80W
80W / 26V / 869-894 MHz PA using 2x PD57045S
The
LdmoST FAMILY
Symbol
Parameter
Value
Unit
V
DD
Supply voltage
32
V
I
D
Drain Current
9
A
P
DISS
Power dissipation at Tcase = +85C
135
W
T
CASE
Operating Case Temperature
-20 to +85
o
C
P
amb
Max. Ambient Temperature
+55
o
C
RF POWER AMPLIFIER DEMOBOARD USING
TWO N-CHANNEL ENHANCEMENT-MODE
LATERAL MOSFETs
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
P
OUT
= 80 W min. with 13 dB gain over
869-894 MHz
10:1 LOAD VSWR CAPABILITY
BeO FREE AMPLIFIER
TYPICAL CDMA PERFORMANCE:
IS-95 CD MA / 9ch FWD
Pout = 14W
Gain = 13 dB
Nd = 22%
ACPR (750 KHz) : -45 dBc
ACPR (1.98 MHz) : -60 dBc
DESCRIPTION
The DB-900-80W is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
amplifier designed for IS-54/-136 & IS-95 base
station applications.
The DB-900-80W is designed in cooperation
with Europeenne de Telecomunications S.A.
(www.etsa.rf), for high gain and broadband
performance operating in common source mode
at 26 V, capable of withstanding load mismatch
up to 10:1 all phases and with harmonics lower
than 30 dBc.
ORDER CODE
DB-900-80W
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25
o
C)
MECH. SPECIFICATION L=80 mm W=50 mm H=10 mm
DB-900-80W
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Symbol
Test Conditions
Min.
Typ.
Max.
Unit
FREQ.
Frequency Range
869
894
MHz
Gain
P
OUT
= 80 W
13
14
dB
P
1dB
Over frequency range: 869 - 894 MHz
80
90
W
Flatness
Over frequency range and @ P
OUT
= 80 W
+/- 0.5
dB
Flatness
P
OUT
from 0.1W to 80 W
1
dB
ND at P
1dB
P
1dB
45
50
%
IRTL
Input return Loss P
OUT
from 0.1W to 80 W
-20
-15
dB
Harmonic
P
OUT
= 80 W
-40
-30
dBc
VSWR
Load Mismatch all phases @ P
OUT
= 80 W
10:1
Spurious
10:1 VSWR all phases and P
OUT
from 0.1 to 80W
-76
dBc
IMD
3
P
OUT
= 80 WPEP
-25
dBc
ELECTRICAL SPECIFICATION (T
amb
= +25
o
C, Vdd = 26V, Idq = 2 x 200 mA)
TYPICAL CDMA PERFORMANCE IS 95 / 9ch FWD (Vdd = 26V, Idq = 300mA)
Frequency
Pout
CH PWR
Pin
CH PWR
Pout
CH PWR
ACPR
-750 KHz
ACPR
+750 KHz
ACPR
-1.98 MHz
ACPR
+1.98 MHz
Itotal
Nd
(MHz)
(W)
(dBm)
(dBm)
(dBc)
(dBc)
(dBc)
(dBc)
(A)
(%)
865
0.63
16.3
28.0
50.5
51.5
71
70
0.64
3.79
875
0.63
15.7
28.0
52.0
53.0
71
71
0.61
3.98
885
0.63
15.3
28.0
54.0
55.0
71
71
0.60
4.04
895
0.63
14.9
28.0
55.0
54.5
72
72
0.58
4.18
865
3.98
23.3
36.0
49.0
51.0
68.0
68.0
1.42
10.78
875
3.98
23.0
36.0
49.5
51.5
68.0
68.0
1.37
11.18
885
3.98
22.6
36.0
52.0
54.0
69.0
69.0
1.32
11.60
895
3.98
22.3
36.0
52.0
54.0
70.0
70.0
1.26
12.15
865
15.85
28.9
42.0
45
45
63
63
2.76
22.09
875
14.79
28.3
41.7
45
45
64
64
2.59
21.96
885
14.13
28.2
41.5
45
45
65
65
2.50
21.73
895
14.79
28.0
41.7
45
45
66
66
2.41
23.61
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DB-900-80W
Output Power vs. Input Power
Power Gain vs. Frequency
Power Gain vs. Input Power
Efficiency vs. Frequency
TYPICAL PERFORMANCE
0
1
2
3
4
5
6
Pin (W)
0
10
20
30
40
50
60
70
80
90
100
110
Pout (W)
890 MHz
880 MHz
860 MHz
870 MHz
900 MHz
Vdd = 26 V
Idq = 2 x 200 mA
1
10
100
1000
Pout (W)
10
11
12
13
14
15
16
17
18
Gp (dB)
Vdd = 26 V
Idq = 2 x 200 mA
860 MHz
870 MHz
880 MHz
900 MHz
890 MHz
850
860
870
880
890
900
910
f (MHz)
10
11
12
13
14
15
16
17
18
Gp (dB)
Vdd = 26 V
Idq = 2 x 200 mA
Pout = 5 W
Pout = 80 W
Pout = 90 W
850
860
870
880
890
900
910
f (MHz)
40
42
44
46
48
50
52
54
56
58
60
62
Nd (%)
Vdd = 26 V
Idq = 2 x 200 mA
Pout = 90 W
Pout = 100 W
Pout = 80 W
DB-900-80W
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Ref. ETSA c07/2000 - Ed1
TEST CIRCUIT PHOTOMASTER
CV1
CV2
Ref. ETSA c07/2000 - Ed1
TEST FIXTURE COMPONENT LAYOUT
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DB-900-80W
TEST CIRCUIT COMPONENT PART LIST
COMPONENT
DESCRIPTION
T1, T2
PD57045S TRANSISTOR
C1, C2, C23, C24
47pF - 500V CERAMIC CHIP CAPACITOR
C3, C4
4.7pF - 500V CERAMIC CHIP CAPACITOR
C5, C6, C17, C18
100pF - 500V CERAMIC CHIP CAPACITOR
C7, C8, C9, C10, C11, C12, C13, C14
10pF - 500V CERAMIC CHIP CAPACITOR
C15, C16
100nF - 63V CERAMIC CHIP CAPACITOR
C19, C20
1F / 35V ELECTROLYTIC CAPACITOR
C21, C22
5.6pF - 500V CERAMIC CHIP CAPACITOR
C26, C27
6.8pF - 500V CERAMIC CHIP CAPACITOR
C25
0.5pF - 500V CERAMIC CHIP CAPACITOR
CV1, CV2
ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V
P1, P2
10K Ohms MULTITURN POTENTIOMETER
R1,R7
100 Ohms 1/4W 1206 SMD CHIP RESISTOR
R2
50 Ohms 30W - 4GHz LOAD
R3, R4
4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR
R5, R6
10K Ohms 1/4W 1206 SMD CHIP RESISTOR
D1, D2
ZENER DIODE 5V - 500 mW SOD80
SM1, SM2
90 SMD HYBRID COUPLER ANAREN Xinger 1304-3
BOARD
METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35
SUBSTRATE
TEFLON-GLASS Er = 2.55
BACK SIDE
COPPER FLANGE 2 mm THICKNESS
CERAMIC CHIP CAPACITORS
ATC100B or EQUIVALENT
DB-900-80W
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