DMV series
August 1999 - Ed: 2A
DAMPER + MODULATION DIODE FOR VIDEO
Symbol
Parameter
Value
Unit
MODUL DAMPER
V
RRM
Repetitive peak reverse voltage
600
1500
V
I
FSM
Surge non repetitive forward current
tp = 10 ms
sinusoidal
DMV16
50
50
A
DMV32
60
75
DMV56
60
80
T
stg
Storage temperature range
- 40 to + 150
C
T
j
Maximum operating junction temperature
150
TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values, per diode)
Insulated TO-220AB
(Bending option F5 available)
FULL KIT IN ONE PACKAGE
HIGH BREAKDOWN VOLTAGE CAPABILITY
VERY FAST RECOVERY DIODE
SPECIFIED TURN ON SWITCHING
CHARACTERISTICS
LOW STATIC AND PEAK FORWARD
VOLTAGE DROP FOR LOW DISSIPATION
INSULATED VERSION:
Insulated voltage = 2500 V
RMS
Capacitance = 7 pF
PLANAR TECHNOLOGY ALLOWING HIGH
QUALITY AND BEST ELECTRICAL
CHARACTERISTICS
OUTSTANDING PERFORMANCE OF WELL
PROVEN DTV AS DAMPER AND
TURBOSWITCH
TM
AS MODULATION
FEATURES AND BENEFITS
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks to
the internal ceramic insulation layer.
DESCRIPTION
MODUL
DAMPER
I
F(AV)
3 A & 6 A
5 A & 6 A
V
RRM
600 V
1500 V
t
rr
50 ns
135 ns
V
F
(max)
1.5 V
1.35 V
MAIN PRODUCT CHARACTERISTICS
1
2
3
DAMPER
MODULATION
1
2
3
1/9
Symbol
Parameter
Value
Unit
DMV16 DMV32 DMV56
R
th(j-c)
Damper junction to case
5.3
4.8
3.6
C/W
R
th(j-c)
Modulation junction to case
6.5
5.3
5.3
R
th(c)
Coupling
0.2
0.2
0.2
R
th(j-c)
Total as per full I
F(AV)
maximum ratings
6.0
5.1
4.5
THERMAL RESISTANCES
Symbol
Parameter
Test conditions
Value
Unit
Tj = 25C
Tj = 125C
Typ. Max. Typ. Max.
V
F
*
Forward voltage drop
I
F
= 5 A
DMV16
1.6
1.0
1.5
V
I
F
= 6 A
DMV32
1.5
1.1
1.35
I
F
= 6 A
DMV56
1.8
1.1
1.5
I
R
**
Reverse leakage current
V
R
= V
RRM
DMV16
60
100
500
A
DMV32
100
100
1000
DMV56
100
100
1000
Pulse test :
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
To evaluate the maximum conduction losses of the DAMPER diode use the following equations :
DMV16: P = 1.14 x I
F(AV)
+ 0.072 x I
F
2
(RMS)
DMV32: P = 1.069 x I
F(AV)
+ 0.047 x I
F
2
(RMS)
DMV56: P = 1.15 x I
F(AV)
+ 0.059 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS OF THE DAMPER DIODES
Symbol
Parameter
Test conditions
Value
Unit
Tj = 25C
Tj = 125C
Typ.
Max.
Typ.
Max.
V
F
*
Forward voltage drop
I
F
= 3A
DMV16
1.4
1
1.3
V
I
F
= 5A
DMV32
1.75
1.2
1.5
I
F
= 5A
DMV56
1.75
1.2
1.5
I
R
**
Reverse leakage current
V
R
= 480V
DMV16
20
150
500
A
DMV32
100
600
2000
DMV56
100
600
2000
Pulse test :
* tp = 380
s,
< 2%
** tp = 5 ms,
< 2%
To evaluate the maximum conduction losses of the MODULATION diode use the following equations :
DMV16: P = 1.06 x I
F(AV)
+ 0.08x I
F
2
(RMS)
DMV32: P = 1.15 x I
F(AV)
+ 0.07 x I
F
2
(RMS)
DMV56: P = 1.15 x I
F(AV)
+ 0.07 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS OF THE MODULATION DIODE
DMV series
2/9
Symbol
Parameter
Test conditions
Value
Unit
Typ.
Max.
t
rr
Reverse recovery time
I
F
= 100mA
I
R
= 100mA
I
RR
= 10mA
Tj = 25C
DMV16
1500
ns
DMV32
850
DMV56
750
t
rr
Reverse recovery time
I
F
= 1A
dI
F
/dt = -50A/
s
V
R
= 30V
Tj = 25C
DMV16
200
300
ns
DMV32
130
175
DMV56
110
135
RECOVERY CHARACTERISTICS OF THE DAMPER DIODE
Symbol
Parameter
Test conditions
Value
Unit
Typ.
Max.
t
fr
Forward recovery time
I
F
= 6A
dI
F
/dt = 80A/
s
V
FR
= 3V
Tj = 100C
DMV16
350
ns
DMV32
570
DMV56
350
V
FP
Peak forward voltage
I
F
= 6A
dI
F
/dt = 80A/
s
Tj = 100C
DMV16
25
34
V
DMV32
21
28
DMV56
19
26
TURN-ON SWITCHING CHARACTERISTICS OF THE DAMPER DIODE
Symbol
Parameter
Test conditions
Value
Unit
Typ.
Max.
t
rr
Reverse recovery time
I
F
= 100mA
I
R
= 100mA
I
RR
= 10mA
Tj = 25C
DMV16
210
650
ns
DMV32
110
350
DMV56
110
350
t
rr
Reverse recovery time
I
F
= 1A
dI
F
/dt = -50A/
s
V
R
= 30V
Tj = 25C
DMV16
95
ns
DMV32
50
DMV56
50
RECOVERY CHARACTERISTICS OF THE MODULATION DIODE
Symbol
Parameter
Test conditions
Value
Unit
Typ.
Max.
t
fr
Forward recovery time
I
F
= 3A
dI
F
/dt = 80A/
s
V
FR
= 3V
Tj = 100C
DMV16
500
ns
I
F
= 5A
dI
F
/dt = 80A/
s
V
FR
= 3V
DMV32
300
DMV56
300
V
FP
Peak forward voltage
I
F
= 3A
dI
F
/dt = 80A/
s
Tj = 100C
DMV16
8
V
I
F
= 5A
dI
F
/dt = 80A/
s
DMV32
10
DMV56
10
TURN-ON SWITCHING CHARACTERISTICS OF THE MODULATION DIODE
DMV series
3/9
ORDERING INFORMATION
DMVxx / F5
LEAD BENDING (OPTION)
DAMPER AND MODULATION DIODES FOR VIDEO
0
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PF(av)(W)
DMV16
DMV32
DMV56
Ip(A)
Fig. 1-1: Power dissipation versus peak forward
current (triangular waveform,
=0.45) (damper
diode.)
0
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PF(av)(W)
DMV16
DMV32/DMV56
Ip(A)
Fig. 1-2: Power dissipation versus peak forward
current (triangular waveform,
=0.45) (modulation
diode)
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
IF(av)(A)
Rth(j-a)=Rth(j-c)
DMV16
DMV32
DMV56
Tamb(C)
T
=tp/T
tp
Fig. 2-1: Average forward current versus ambient
temperature (damper diode).
0
25
50
75
100
125
150
0
1
2
3
4
5
6
IF(av)(A)
DMV32/DMV56
DMV16
Rth(j-a)=Rth(j-c)
Tamb(C)
T
=tp/T
tp
Fig. 2-2: Average forward current versus ambient
temperature (modulation diode).
DMV series
4/9
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.1
1.0
10.0
20.0
IFM(A)
Typical
Tj=125C
Maximum
Tj=25C
Maximum
Tj=125C
VFM(V)
Fig. 3-1: Forward voltage drop versus forward
current (damper diode) DMV16.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0.1
1.0
10.0
50.0
IFM(A)
Typical
Tj=125C
Maximum
Tj=25C
Maximum
Tj=125C
VFM(V)
Fig. 3-2: Forward voltage drop versus forward
current (damper diode)DMV32.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
0.1
1.0
10.0
50.0
IFM(A)
Typical
Tj=125C
Maximum
Tj=25C
Maximum
Tj=125C
VFM(V)
Fig. 3-3: Forward voltage drop versus forward
current (damper diode)DMV56.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.1
1.0
10.0
20.0
IFM(A)
Typical
Tj=125C
Maximum
Tj=25C
Maximum
Tj=125C
VFM(V)
Fig. 3-4: Forward voltage drop versus forward
current (modulation diode)DMV16.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.1
1.0
10.0
20.0
IFM(A)
Typical
Tj=125C
Maximum
Tj=25C
Maximum
Tj=125C
VFM(V)
Fig. 3-5: Forward voltage drop versus forward
current (modulation diode)DMV32 and DMV56.
1E-3
1E-2
1E-1
1E+0
0.1
0.2
0.5
1.0
K=[Zth(j-c)/Rth(j-c)]
tp(s)
T
=tp/T
tp
Single pulse
= 0.1
= 0.2
= 0.5
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
DMV series
5/9
1E-3
1E-2
1E-1
1E+0
0
5
10
15
20
25
30
35
40
IM(A)
Tc=100C
DMV16
DMV32/DMV56
I
M
t
=0.5
t(s)
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (modulation diode).
1E-3
1E-2
1E-1
1E+0
0
5
10
15
20
25
30
35
40
45
IM(A)
Tc=100C
DMV56
DMV32
DMV16
t(s)
I
M
t
=0.5
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (damper diode).
0.1
0.2
0.5
1.0
2.0
5.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Qrr(C)
IF=IF(av)
90% confidence
Tj=125C
DMV56
DMV32
DMV16
dIF/dt(A/s)
Fig. 6-1: Reverse recovery charges versus d
IF
/dt
(damper diode).
0.1
1.0
10.0
50.0
0
50
100
150
200
250
300
350
400
450
500
Qrr(nC)
IF=IF(av)
90% confidence
Tj=125C
DMV32/DMV56
DMV16
dIF/dt(A/s)
Fig. 6-2: Reverse recovery charges versus d
IF
/dt
(modulation diode).
0.1
0.2
0.5
1.0
2.0
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
IRM(A)
IF=IF(av)
90% confidence
Tj=125C
DMV16
DMV32
DMV56
dIF/dt(A/s)
Fig. 7-1: Reverse recovery current versus d
IF
/dt
(damper diode).
0.1
1.0
10.0
100.0
0
1
2
3
4
5
6
7
8
9
10
IRM(A)
IF=IF(av)
90% confidence
Tj=125C
DMV32/DMV56
DMV16
dIF/dt(A/s)
Fig. 7-2: Reverse recovery current versus d
IF
/dt
(modulation diode).
DMV series
6/9
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
35
40
45
50
VFP(V)
IF=IF(av)
90% confidence
Tj=125C
DMV16
DMV32
DMV56
dIF/dt(A/s)
Fig. 8-1: Transient peak forward voltage versus
d
IF
/dt (damper diode).
0
20
40
60
80
100 120 140 160 180 200
0
2
4
6
8
10
12
14
16
18
20
VFP(V)
IF=IF(av)
90% confidence
Tj=125C
DMV32/DMV56
DMV16
dIF/dt(A/s)
Fig. 8-2: Transient peak forward voltage versus
d
IF
/dt (modulation diode).
0
20
40
60
80
100
120
140
200
250
300
350
400
450
500
550
600
650
700
tfr(ns)
IF=IF(av)
90% confidence
Tj=125C
Vfr=3V
DMV16/DMV32/DMV56
dIF/dt(A/s)
Fig. 9-1: Forward recovery time versus d
IF
/dt
(damper diode).
0
20
40
60
80
100 120 140 160 180 200
0
50
100
150
200
250
300
350
400
tfr(ns)
IF=IF(av)
90% confidence
Tj=125C
Vfr=1.5V
DMV32/DMV56
DMV16
dIF/dt(A/s)
Fig. 9-2: Forward recovery time versus d
IF
/dt
(modulation diode).
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VFP,IRM,Qrr[Tj] / VFP,IRM,Qrr[Tj=125C]
VFP
IRM
Qrr
Tj(C)
Fig. 10: Dynamic parameters versus junction
temperature (damper & modulation diodes).
1
10
100
200
1
10
100
VR(V)
C(pF)
Tj=25C
F=1MHz
Damper diodes
Modulation diodes
DMV16
DMV32
DMV56
DMV16
DMV32/DMV56
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
DMV series
7/9
PACKAGE MECHANICAL DATA
TO-220AB F5 OPTION
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
15.20
15.90
0.598
0.625
a1
24.16
26.90
0.951
1.059
a3
1.65
2.41
0.064
0.094
B
10.00
10.40
0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
I
3.75
3.85
0.147
0.151
L
2.65
2.95
0.104
0.116
I2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
l4
15.80
16.80
0.622
0.661
16.40 typ.
0.645 typ.
M1
2.92
3.30
0.114
0.129
R1
1.40 typ.
0.055 typ.
R2
1.40 typ.
0.055 typ.
c2
B
a1
C
b2
l2
c2
a3
R2
R1
l3
b1
l4
A
F
L
I
e
c1
M1
cooling method: by conduction (c)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
2.2mm
2.54mm
1mm
3.1mm
PRINTED CIRCUIT LAYOUT FOR F5 LAYOUT
DMV series
8/9
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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http://www.st.com
Type
Marking
Package
Weight
Base qty
Delivery mode
DMV16
DMV16/F5
DMV16
TO-220AB
2.2 g.
50
Tube
DMV32
DMV32/F5
DMV32
TO-220AB
2.2 g.
50
Tube
DMV56
DMV56/F5
DMV56
TO-220AB
2.2 g.
50
Tube
Epoxy meets UL94, V0
PACKAGE MECHANICAL DATA
TO-220AB
M
B
l4
C
b2
a2
l2
c2
l3
b1
a1
A
F
L
I
e
c1
REF.
DIMENSIONS
Millimeters
Inches
Min.
Typ. Max.
Min.
Typ. Max.
A
15.20
15.90 0.598
0.625
a1
3.75
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88 0.024
0.034
b2
1.23
1.32 0.048
0.051
C
4.40
4.60 0.173
0.181
c1
0.49
0.70 0.019
0.027
c2
2.40
2.72 0.094
0.107
e
2.40
2.70 0.094
0.106
F
6.20
6.60 0.244
0.259
I
3.75
3.85 0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95 0.104
0.116
l2
1.14
1.70 0.044
0.066
l3
1.14
1.70 0.044
0.066
M
2.60
0.102
cooling method: by conduction (c)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
DMV series
9/9
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