1/5
January 2002 - Ed: 2B
s
High breakdown voltage capability
s
High frequency operation
s
Specified turn on switching characteristics
s
Very fast recovery diode
s
Low static and peak forward voltage drop for low
dissipation
s
Insulated package: TO-220FPAC
Insulating voltage = 2000V DC
Capacitance = 12pF
s
Planar technology allowing high quality and best
electrical characteristics
FEATURES AND BENEFITS
High voltage diode especially designed for
horizontal deflection stage in standard and high
resolution displays for TV's and monitors.
This device is packaged in TO-220FPAC
(insulated package).
DESCRIPTION
I
F(AV)
4 A
V
RRM
1500 V
V
F
(max)
1.5 V
trr (max)
170 ns
MAIN PRODUCTS CHARACTERISTICS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
1500
V
I
F(RMS)
RMS forward current
15
A
I
FSM
Surge non repetitive forward current
tp = 10ms
sinusoidal
50
A
T
stg
Storage temperature
- 65 to 150
C
T
j
Maximum operating junction temperature
150
C
ABSOLUTE MAXIMUM RATINGS
DTV1500LFP
(CRT HORIZONTAL DEFLECTION)
HIGH VOLTAGE DAMPER DIODE
K
A
TO-220FPAC
DTV1500LFP
A
K
DTV1500LFP
2/5
Symbol
Parameter
Test Conditions
Value
Unit
Min
Typ
Max
I
R
*
Reverse leakage current
V
R
= 1500V
Tj = 25C
100
A
Tj = 125C
100
1000
A
V
F
**
Forward voltage drop
I
F
= 4A
Tj = 25C
1.2
1.7
V
Tj = 125C
1.1
1.5
pulse test : * tp = 5 ms ,
< 2%
** tp = 380
s,
< 2%
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th(j-c)
Junction to Case thermal resistance
5.8
C/W
THERMAL RESISTANCE
Symbol
Parameter
Test Conditions
Value
Unit
Min
Typ
Max
t
rr
Reverse
recovery time
Tj = 25C
I
F
= 1 A dI
F
/dt = -50A/
s
V
R
= 30V
130
170
ns
t
rr
Reverse
recovery time
Tj = 25C
I
F
= 100mA I
R
= 100mA
I
RR
= 10mA
850
ns
RECOVERY CHARACTERISTICS
Symbol
Parameter
Test Conditions
Value
Unit
Min
Typ
Max
t
fr
Forward
recovery time
Tj = 100C
I
F
= 4 A
dI
F
/dt = 80 A/
s
V
FR
= 3 V
450
ns
Tj = 25C
I
F
= 6.5A dI
F
/dt = 50 A/
s
V
FR
= 3V
450
V
Fp
Peak forward
voltage
Tj = 100C
I
F
= 4A
dI
F
/dt = 80 A/
s
28
36
V
Tj = 25C
I
F
=6.5A dI
F
/dt = 50 A/
s
13
17
To evaluate the maximum conduction losses use the following equation :
P = 1.2 x I
F(AV)
+ 0.075 x I
F
2
(RMS)
TURN-ON SWITCHING CHARACTERISTICS
DTV1500LFP
3/5
0
1
2
3
4
5
6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Ip(A)
PF(av)(W)
Fig. 1: Power dissipation versus peak forward cur-
rent (triangular waveform,
= 0.45)
0
25
50
75
100
125
150
0
1
2
3
4
5
Tcase(C)
IF(av)(A)
T
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
1
2
3
4
5
6
7
8
9
10
VFM(V)
IFM(A)
Typical
Tj=125C
Maximum
Tj=25C
Maximum
Tj=125C
Fig. 3: Forward voltage drop versus forward
curent
1E-3
1E-2
1E-1
1E+0
0
5
10
15
20
25
30
35
40
t(s)
IM(A)
Tc=25C
Tc=100C
Tc=75C
I
M
t
=0.5
Fig. 4: Non repetitive surge peak forward current
versus overload duration
0.1
0.2
0.5
1.0
2.0
5.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
dIF/dt(A/s)
Qrr(C)
IF=IF(av)
90% confidence
Tj=125C
Fig. 5: Reverse recovery charges versus dIF/dt
0.1
0.2
0.5
1.0
2.0
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
dIF/dt(A/s)
IRM(A)
IF=IF(av)
90% confidence
Tj=125C
Fig. 6: Reverse recovery current versus dIF/dt
DTV1500LFP
4/5
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
35
40
45
50
dIF/dt(A/s)
VFP(V)
IF=IF(av)
90% confidence
Tj=125C
Fig. 7: Transient peak forward voltage versus
dIF/dt
0
20
40
60
80
100
120
140
200
250
300
350
400
450
500
550
600
650
700
dIF/dt(A/s)
tfr(ns)
IF=IF(av)
90% confidence
Tj=125C
Vfr=3V
Fig. 8: Forward recovery time versus dIF/dt
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Tj(C)
VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125C]
VFP
IRM
Qrr
Fig. 9: Dynamic parameters versus junction tem-
perature
1
10
100
200
1
10
50
VR(V)
C(pF)
Tj=25C
F=1MHz
Fig. 10: Junction capacitance versus reverse volt-
age applied (typical values)
1E-2
1E-1
1E+0
1E+1
0.1
0.2
0.5
1.0
t(s)
K=[Zth(j-c)/Rth(j-c)]
= 0.1
= 0.2
= 0.5
Single pulse
T
=tp/T
tp
Fig. 11: Relative variation of thermal impedance
junction to case versus pulse duration
DTV1500LFP
5/5
PACKAGE DATA
TO-220FPAC
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
H
L3
L2
L4
L6
G
G1
F
F1
D
E
L7
A
B
Dia
L5
Type
Marking
Package
Weight
Base qty
Delivery mode
DTV1500LFP
DTV1500LFP
TO-220FPAC
1.8g
50
Tube
s
Cooling method: C
s
Epoxy meets UL94-V0
s
Torquevalue: 0.55 m.Ntyp (0.7m.Nmax)
s
Electrical Isolation: 2000V DC
s
Capacitance: 12pF
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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2002 STMicroelectronics - Printed in Italy - All rights reserved.
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