EMIF01-10005W5

May 1999 - Ed: 1

IEC 1000-4-2

15kV

(air discharge)

8 kV

(contact discharge)

COMPLIES WITH THE FOLLOWING STANDARD:

SOT323-5L

FUNCTIONAL DIAGRAM

GND

= 100

= 50pF

I/O

Cost-effectiveness compared to discrete solution
EMI bi-directional low-pass filter
High efficiency in ESD suppression.
High flexibility in the design of high density boards
Very low PCB space consuming : 4.2 mm

typically

High reliability offered by monolithic integration

BENEFITS

EMI FILTER

INCLUDING ESD PROTECTION

Application Specific Discretes

A.S.D.

Where EMI filtering in ESD sensitive equipment is required :

Computers and printers
Communication systems
Mobile phones
MCU Boards

MAIN APPLICATIONS

The EMIF01-10005W5 is a highly integrated array
designed to suppress EMI / RFI noise in all systems
subjected to electromagnetic interferences.

Additionally, this filter includes an ESD protection circuitry
which prevents the protected device from destruction when
subjected to ESD surges up to 15 kV.

DESCRIPTION

TM : ASD is trademark of STMicroelectronics.

ESD response to IEC1000-4-2 (16 kV air discharge)

Filtering response

100

1000 2000

-30

-20

-10

f(MHz)

1/10

Symbol

Parameter and test conditions

Value

Unit

ESD discharge IEC1000-4-2, air discharge
ESD discharge IEC1000-4-2, contact discharge

Junction temperature

150

°C

Operating temperature range

-40 to + 85

°C

stg

Storage temperature range

-55 to +150

°C

Lead solder temperature (10 second duration)

260

°C

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25 °C)

Symbol

Test conditions

Min.

Typ.

Max.

Unit

= 1 mA

= 3V

I/O

100

120

= 10 A, t

= 2.5

s (see note 1)

at 0V bias

Note 1 : to calculate the ESD residual voltage, please refer to the paragraph "ESD PROTECTION" on pages 4 & 5

Symbol

Parameter

Breakdown voltage

Leakage current @ V

Stand-off voltage

Clamping voltage

Dynamic impedance

Peak pulse current

I/O

Series resistance between Input
and Output

Input capacitance per line

ELECTRICAL CHARACTERISTICS (T

amb

= 25 °C)

slope : 1 / R

EMIF01-10005W5

2/10

TECHNICAL INFORMATION

FREQUENCY BEHAVIOR

The EMIF01-10005W5 is firstly designed as an EMI/RFI filter. This low-pass filter is characterized by the following
parameters:

- Cut-off frequency

- Insertion loss

- High frequency rejection

Figure A1 gives these parameters, in particular the signal rejection at the GSM frequency is about -24dB at 900MHz,

100

1000 2000

-30

-20

-10

f(MHz)

Fig A1: EMIF01-10005W5 frequency response curve.

Fig A2: Measurement conditions

TRACKING GENERATOR

TG OUT

SPECTRUM ANALYSER

RF IN

SMA

TEST BOARD

EMIF0

EMIF01-10005W5

3/10

ESD PROTECTION

In addition to its filtering function, the EMIF01-10005W5 is particularly optimized to perform ESD protection.

ESD protection is based on the use of device which clamps at :

= V

+ R

This protection function is splitted in 2 stages. As shown in figure A3, the ESD strikes are clamped by the first stage S1 and
then its remaining overvoltage is applied to the second stage through the resistor R. Such a configuration makes the output
voltage very low at the Vout level.

To have a good approximation of the remaining voltages at both Vin and Vout stages, we provide the typical dynamical
resistance value Rd. By taking into account these following hypothesis : R>>Rd, R

>>Rd and Rload>>Rd, it gives these

formulas:

Vin

Rg.Vbr

Rd.Vg

Vout

R.Vbr

Rd.Vin

The results of the calculation done for V

=8kV, R

=330

(IEC1000-4-2 standard) and V

=7V (typ.) give:

Vin = 31.2 V

Vout = 7.3 V

This confirms the very low remaining voltage across the device to be protected. It is also important to note that in this
approximation the parasitic inductance effect was not taken into account. This could be few tenths of volts during few ns at
the Vin side. This parasitic effect is not present at the Vout side due the low current involved after the resistance R.

Fig A3 : ESD clamping behavior

ESD

Surge

Vin

Vout

Rload

Vbr

Device to be protected

EMIF01-10005W5

Fig A4 : Measurement conditions

TEST BOARD

ESD

SURGE

EMIF01

16kV

Air

Discharge

Vin

Vout

EMIF01-10005W5

4/10

Please note that the EMIF01-10005W5 is not only acting
for positive ESD surges but also for negative ones. For
these kind of disturbances it clamps close to ground
voltage as shown in Fig. A5b.

NOTE: DYNAMIC RESISTANCE MEASUREMENT

As the value of the dynamic resistance remains stable for
a surge duration lower than 20

s, the 2.5

s rectangular

surge is well adapted. In addition both rise and fall times
are optimized to avoid any parasitic phenomenon during
the measurement of Rd.

Fig A5 : Remaining voltage at both stages S1 (Vin) and S2 (Vout) during ESD surge

a) Positive surge

b) Negative surge

Fig A6 : Rd measurement current wave

2.5 µs

2 µs

t
t

2.5µs duration measurement wave

The measurements shown here after illustrate very clearly (Fig. A5a) the high efficiency of the ESD protection :

- no influence of the parasitic inductances on Vout stage

- Vout clamping voltage very close to V

EMIF01-10005W5

5/10

Fig A7 : Crosstalk phenomena

line 1

line 2

DRIVERS

RECEIVERS

CROSSTALK BEHAVIOR

1- Crosstalk phenomena

2- Digital Crosstalk

Figure A8 shows the measurement circuit used to quantify the crosstalk effect in a classical digital application.

Figure A9 shows that in such a condition signal from 0 to 5V and rise time of 3 ns, the impact on the disturbed line is less
than 100mV peak to peak. No data disturbance was noted on the concerned line. The same results were obtained with
falling edges.

Fig A8 : Digital crosstalk measurement

Line 1

Line 2

+5V

74HC04

+5V

Square
Pulse
Generator
5KHz

Fig A9 : Digital crosstalk results

EMIF01-10005W5

6/10

3- Analog Crosstalk

Fig A10 : Analog crosstalk measurement

TRACKING GENERATOR

TG OUT

SPECTRUM ANALYSER

RF IN

SMA

TEST BOARD

EMIF0

Fig A11 : Typical analog crosstalk result

100

1,000

-100

-80

-60

-40

-20

F(MHz)

Figure A10 gives the measurement circuit for the analog
application. In figure A11, the curve shows the effect of cell
I/O1 on cell I/O2. In usual frequency range of analog
signals (up to 100MHz) the effect on disturbed line is less
than -43 dB.

EMIF01-10005W5

7/10

4 - PSpice model

Note This model is available for an ambient temperature

of 27°C

Fig A12: PSpice model of one EMIF01 cell

Fig. A14: PSpice simulation : IEC 1000-4-2 Contact Discharge response

1000

Cjo

25p

IBV

100u

IKF

1000

10E-15

1.016E-15

10E-15

ISR

100p

1.0755

0.6

0.3333

0.6

50n

Fig A13: PSpice parameters

100

t(ns)

(V)

Vin

Vout

a) Positive surge

100

-60

-50

-40

-30

-20

-10

t(ns)

(V)

Vin

Vout

b) Negative surge

Fig A15: Comparison between PSpice

simulation and measured frequency response

100

1,000

-30

-20

-10

F(MHz)

Measured

PSpice

EMIF01-10005W5

8/10

PACKAGE MECHANICAL DATA

SOT323-5L

RECOMMENDED FOOTPRINT

0.3mm

1mm

0.35mm

29mm

Mechanical specifications

Lead plating

Tin-lead

Lead plating thickness

m min.

m max.

Lead material

Sn / Pb
(70% to 90% Sn)

Lead coplanarity

100

m max.

Body material

Molded epoxy

Flammability

UL94V-0

REF.

DIMENSIONS

Millimeters

Inches

Min.

Max.

Min.

Max.

0.8

1.1

0.031

0.043

0.1

0.004

0.8

0.031

0.039

0.15

0.3

0.006

0.012

0.1

0.18

0.004

0.007

1.8

2.2

0.071

0.086

1.15

1.35

0.045

0.053

0.65 Typ.

1.8

2.4

0.071

0.094

0.1

0.4

0.004

0.016

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia

Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

http://www.st.com

EMIF01-10005W5

10/10

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: EMIF01-10005W5

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: EMIF01-10005W5