ChipFind - документация

Электронный компонент: EMIF02-MIC03F2

Скачать:  PDF   ZIP
1/7
MAIN PRODUCT CHARACTERISTICS:
Where EMI filtering in ESD sensitive equipment is
required:
Mobile phones and communication systems
Computers, printers and MCU Boards
DESCRIPTION
The EMIF02-MIC02 is a highly integrated devices
designed to suppress EMI/RFI noise in all systems
subjected to electromagnetic interferences. The
EMIF02 flip chip packaging means the package
size is equal to the die size.
This filter includes an ESD protection circuitry
which prevents the device from destruction when
subjected to ESD surges up 15kV.
BENEFITS
EMI symmetrical (I/O) low-pass filter
High efficiency in EMI filtering
Lead free package
Very low PCB space consuming:
1.07mm x 1.57mm
Very thin package: 0.65 mm
High efficiency in ESD suppression
High reliability offered by monolithic integration
High reducing of parasitic elements through
integration & wafer level packaging.
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4 on input pins
15kV (air discharge)
8kV
(contact discharge)
Level 1 on output pins 2kV
(air discharge)
2kV
(contact discharge)
EMIF02-MIC02F2
2 LINES EMI FILTER
INCLUDING ESD PROTECTION
REV. 1
October 2004
Figure 2: Basic Cell Configuration
Input
Output
GND
GND
GND
Low-pass Filter
Ri/o = 470
Cline = 16pF
IPADTM
Flip-Chip
(6 Bumps)
Figure 1: Pin Configuration (Ball side)
B
1
2
3
A
I1
O1
GND
GND
I2
O2
TM: IPAD is a trademark of STMicroelectronics.
Table 1: Order Code
Part Number
Marking
EMIF02-MIC02F2
FJ
EMIF02-MIC02F2
2/7
Table 2: Absolute Ratings (limiting values)
Table 3: Electrical Characteristics (T
amb
= 25C)
Symbol
Parameter and test conditions
Value
Unit
T
j
Maximum junction temperature
125
C
T
op
Operating temperature range
- 40 to + 85
C
T
stg
Storage temperature range
- 55 to + 150
C
Symbol
Parameter
V
BR
Breakdown voltage
I
RM
Leakage current @ V
RM
V
RM
Stand-off voltage
V
CL
Clamping voltage
R
d
Dynamic impedance
I
PP
Peak pulse current
R
I/O
Series resistance between Input &
Output
C
line
Input capacitance per line
Symbol
Test conditions
Min.
Typ.
Max.
Unit
V
BR
I
R
= 1 mA
14
16
V
I
RM
V
RM
= 12V per line
500
nA
R
I/O
423
470
517
C
line
@ 0V
16
pF
Figure 3: S21 (dB) attenuation measurement
and Aplac simulation
Figure 4: Analog crosstalk measurements
1.0M
3.0M
10.0M
30.0M
100.0M
300.0M
1.0G
3.0G
- 50.00
- 45.00
- 40.00
- 35.00
- 30.00
- 25.00
- 20.00
- 15.00
- 10.00
dB
f/Hz
dB
Measurement
Simulation
1.0M
3.0M
10.0M
30.0M
100.0M
300.0M
1.0G
3.0G
-80.00
-70.00
-60.00
-50.00
-40.00
-30.00
-20.00
dB
f/Hz
-
-
-
-
-
-
I2/O1
I
V
I
PP
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
I
PP
V
RM
V
BR
V
CL
EMIF02-MIC02F2
3/7
Figure 5:
Digital
crosstalk
measurement
Figure 6: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
Figure 7: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
Figure 8: Line capacitance versus applied
voltage
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
11
12
V (V)
R
F=1MHz
V
osc
=30mV
RMS
T
j
=25C
C(pF)
EMIF02-MIC02F2
4/7
Figure 9: Aplac model
Figure 10: Aplac parameters
MODEL = D01-gnd
Rsubump
Rsubump
Cox
Cox
Rsubump
Cox
Rsubump
Cox
gnd
MODEL = D01-ext
MODEL = D01-int
MODEL = D01-ext
MODEL = D01-int
R_470R
R_470R
I2
I1
O1
O2
gnd
50pH
50m
Lgnd
Rgnd
Cgnd
50pH
50m
Lgnd
Rgnd
Cgnd
Model D01-ext
BV = 7
CJO = Cz_ext
IBV = 1u
IKF = 1000
IS = 10f
ISR = 100p
N = 1
M = 0.3333
RS = Rs_ext
VJ = 0.6
TT = 50n
Ls 400pH
Rs 100m
R_470R 482.6
Cz_ext 8.73pF
Rs_ext 850m
Cz_int 2.9pF
Rs_int 850m
Cz_gnd 215.61pF
Rs_gnd 470m
Rgnd 10m
Lgnd 48pH
Cgnd 0.15pF
Cox 3.05pF
Rsubump 200m
Model D01-int
BV = 7
CJO = Cz_int
IBV = 1u
IKF = 1000
IS = 10f
ISR = 100p
N = 1
M = 0.3333
RS = Rs_int
VJ = 0.6
TT = 50n
Model D01-gnd
BV = 7
CJO = Cz_gnd
IBV = 1u
IKF = 1000
IS = 10f
ISR = 100p
N = 1
M = 0.3333
RS = Rs_gnd
VJ = 0.6
TT = 50n
EMIF02-MIC02F2
5/7
Figure 11: Ordering Information Scheme
Figure 12: FLIP-CHIP Package Mechanical Data
Figure 13: Foot print recommendations
Figure 14: Marking
EMIF yy - xxx zz Fx
EMI Filter
Number of lines
Information
Package
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
F = Flip-Chip
x
= 1: 500m, Bump = 315m
= 2: Leadfree Pitch = 500m, Bump = 315m
= 3: Leadfree Pitch = 400m, Bump = 250m
1.07mm 50m
1.57mm 50m
500m 50
315m 50
500m 50
650m 65
Copper pad Diameter :
250m recommended , 300m max
Solder stencil opening : 330m
Solder mask opening recommendation :
340m min for 300m copper pad diameter
365
365
240
40
220
x
y
x
w
z
w
All dimensions in m
E
Dot, ST logo
xx = marking
yww = datecode
(y = year
ww = week)
z = packaging
location