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EMIF02-USB05C2
2 LINES EMI FILTER
INCLUDING ESD PROTECTION
REV. 1
March 2005
IPADTM
Coated Flip-Chip
(8 Bumps)
Figure 1: Pin Configuration (ball side)
B
1
2
C
D
A
IO4
V
CC
O2
I2
O1
I1
IO3
GND
TM: IPAD is a trademark of STMicroelectronics.
Table 1: Order Code
Part Number
Marking
EMIF02-USB05C2
GV
MAIN APPLICATION
When EMI filtering is ESD sensitive equipment is
required:
Mobile phones and communication systems
Computers, printers and MCU boards
DESCRIPTION
The EMIF02-USB05C2 is a highly integrated array
designed to suppress EMI / RFI noise for USB port
filtering.
The EMIF02-05USBC2 Flip-Chip packaging
means the package size is equal to the die size.
Additionally, this filter includes an ESD protection
circuitry which prevents the protected device from
destruction when subjected to ESD surges up to
15kV. This device is designed to be fully
compatible with all USB standards.
BENEFITS
2 x EMI low-pass filter + 2 lines ESD protected
1.5k
pull-up included
High efficiency in EMI filtering
Lead free coated package
Very low PCB space consuming:
1.92mm x 0.92mm
Very thin package: 0.69mm
High reliability offered by monolithic integration
High reducing of parasitic elements through
integration and wafer level packaging
USB 2.0 full speed (12Mbps), OTG compliant
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4
15kV (air discharge)
8kV (contact discharge)
MIL STD 883E - Method 3015-6 Class 3
Figure 2: Configuration
Output2
GND
Input 1
Input 2
IO3
V
CC
Output 1
R3
R1
R2
IO4
EMIF02-USB05C2
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Table 2: Absolute Ratings (limiting values)
Table 3: Electrical Characteristics (T
amb
= 25C)
Symbol
Parameter and test conditions
Value
Unit
T
j
Maximum junction temperature
125
C
T
op
Operating temperature range
- 40 to + 85
C
T
stg
Storage temperature range
- 55 to + 150
C
Symbol
Parameter
V
BR
Breakdown voltage
I
RM
Leakage current @ V
RM
V
RM
Stand-off voltage
C
line
Input capacitance per line
Symbol
Test conditions
Tolerance
Min.
Typ.
Max.
Unit
V
BR
I
R
= 1 mA
6
9
V
I
RM
V
RM
= 5V per line
1
A
R
1
, R
2
I = 10 mA
5%
33
R
3
I = 1 mA
5%
1.5
k
C
line
@ 0V
30
pF
Matching
Serial resistance matching
1
%
I
V
V
BR
V
RM
I
RM
I
R
I
RM
I
R
V
RM
V
BR
EMIF02-USB05C2
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Figure 3: S21 (dB) attenuation measurement
Figure 4: Analog crosstalk measurements
Figure 5: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
Figure 6: ESD response to IEC61000-4-2 (-15kV
air discharge) on one input V(in) and on one
output (Vout)
Figure 7: Junction capacitance versus reverse
voltage applied
100.0k
1.0M
10.0M
100.0M
1.0G
- 40.00
- 30.00
- 20.00
- 10.00
0.00
dB
f/Hz
-
-
-
-
f/Hz
-
-
-
-
-
-
-
-
100.0k
1.0M
10.0M
100.0M
1.0G
- 100.00
- 90.00
- 80.00
- 70.00
- 60.00
- 50.00
- 40.00
- 30.00
- 20.00
- 10.00
0.00
dB
f/Hz
-
-
-
-
-
-
-
V(in)
5V/d
V(out)
5V/d
100ns/d
V(in)
5V/d
V(out)
5V/d
100ns/d
0
5
10
15
20
25
30
35
0
1
2
3
4
5
C
(pF)
LINE
V
(V)
LINE
EMIF02-USB05C2
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Figure 8: Aplac model device structure
Figure 9: Aplac model parameters
Port1
50
Port2
50
Ls
c2
Rs
Rs
Ls
c1
bulk
MODEL = D1
R2
Lbump
Rbump
bulk
R1
b2
MODEL = D1
A2
bulk
MODEL = D1
bulk
MODEL = D1
A1
R3
Lbump
D1
c2
Rbump
bulk
MODEL = D1
b1
Lbump Rbump
MODEL = D2
bulk
Lbump Rbump
bulk
MODEL = D1
D2
Lbump Rbump
Lbump
Rbump
bulk
MODEL = D1
c1
Lbump
Rbump
Lbump
Rbump
Lgnd
Rgnd
Cgnd
bulk
MODEL = D1
R2
Lbump
Rbump
bulk
R1
b2
MODEL = D1
A2
bulk
MODEL = D1
bulk
MODEL = D1
A1
R3
Lbump
D1
c2
Rbump
bulk
MODEL = D1
b1
Lbump Rbump
MODEL = D2
bulk
Lbump Rbump
bulk
MODEL = D1
D2
Lbump Rbump
Lbump
Rbump
bulk
MODEL = D1
c1
Lbump
Rbump
bulk
MODEL = D1
R2
Lbump
Rbump
bulk
R1
b2
MODEL = D1
A2
bulk
MODEL = D1
bulk
MODEL = D1
A1
R3
Lbump
D1
c2
Rbump
bulk
MODEL = D1
b1
Lbump Rbump
MODEL = D2
bulk
Lbump Rbump
bulk
MODEL = D1
D2
Lbump Rbump
Lbump
Rbump
bulk
MODEL = D1
c1
Lbump
Rbump
Lbump
Rbump
Lgnd
Rgnd
Cgnd
Variables
aplacvar Ls 600pH
aplacvar Rs 200m
aplacvar R2 33
aplacvar R3 33
aplacvar R1 1.5k
aplacvar Cz_D1 15pF
aplacvar Rs_D1 1
aplacvar Cz_D2 300pF
aplacvar Rs_D2 0.3
aplacvar Lgnd 100pH
aplacvar Rgnd 100m
aplacvar Cgnd 0.4pF
aplacvar Lbump 50pH
aplacvar Rbump 20m
Diode D2
BV=7
IBV=1m
CJO=Cz_d2
M=0.3333
RS=Rs_d2
VJ=0.6
TT=100n
Diode D1
BV=7
IBV=1m
CJO=Cz_d1
M=0.3333
RS=Rs_d1
VJ=0.6
TT=100n
EMIF02-USB05C2
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Figure 10: Ordering Information Scheme
Figure 11: FLIP-CHIP Package Mechanical Data
Figure 12: Foot Print Recommendations
Figure 13: Marking
EMIF yy - xxx zz Cx
EMI Filter
Number of lines
Information
Package
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
C = Coated Flip-Chip
x
= 1: 500m, Bump = 315m
= 2: Leadfree Pitch = 500m, Bump = 315m
= 3: Leadfree Pitch = 400m, Bump = 250m
0.92mm 50m
1.92mm 50m
315m 50
500m 10
500m 10
690m 65
Copper pad Diameter :
250m recommended , 300m max
Solder stencil opening : 330m
Solder mask opening recommendation :
340m min for 315m copper pad diameter
365
365
240
40
220
x
y
x
w
z
w
All dimensions in m
E
Dot, ST logo
xx = marking
yww = datecode
(y = year
ww = week)
z = packaging location
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