www.docs.chipfind.ru
STTH20003TV
October 1999 - Ed: 2C
HIGH FREQUENCY SECONDARY RECTIFIER
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in ISOTOP
TM
, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecom power supplies.
DESCRIPTION
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRAFAST, SOFT AND NOISE-FREE
RECOVERY
ISOLATED PACKAGE:
2500 V
RMS
(UL APPROVALPENDING DEVICE)
LOW INDUCTANCE AND LOW CAPACITANCE
ALLOW SIMPLER LAYOUT
FEATURES AND BENEFITS
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
300
V
I
F(RMS)
RMS forward current
180
A
I
F(AV)
Average forward current
Tc = 85
C
= 0.5
Per diode
Perdevice
100
200
A
I
FSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
1000
A
I
RSM
Non Repetitive peak reverse current
tp = 100
s square
13
A
T
stg
Storage temperature range
- 55 to + 150
C
Tj
Maximum operating junction temperature
150
C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 100 A
V
RRM
300 V
Tj (max)
150
C
V
F
(max)
0.95 V
trr (max)
90 ns
MAJOR PRODUCTS CHARACTERISTICS
A1
K1
K2
A2
A1
A2
K1
K2
ISOTOP
TM
ISOTOP is a registered trademark of STMicroelectronics
1/5
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
V
R
= 300 V
Tj = 25
C
200
A
Tj = 125
C
0.2
2
mA
V
F
**
Forward voltage drop
I
F
= 100 A
Tj = 25
C
1.20
V
Tj = 125
C
0.8
0.95
Pulse test : * tp = 5 ms,
< 2 %
** tp = 380
s,
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.75 x I
F(AV)
+ 0.0020 x I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Tests Conditions
Min.
Typ.
Max.
Unit
trr
I
F
= 0.5 A
Irr = 0.25 A
I
R
= 1A
Tj = 25
C
55
ns
I
F
= 1 A
dI
F
/dt = - 50 A/
s
V
R
= 30 V
90
tfr
I
F
= 100 A
dI
F
/dt = 200 A/
s
Tj = 25
C
1400
ns
V
FP
V
FR
= 1.1 x V
F
max.
5
V
S
factor
Vcc = 200 V
I
F
= 100 A
Tj = 125
C
0.3
-
I
RM
dI
F
/dt = 200 A/
s
18
A
RECOVERY CHARACTERISTICS
Symbol
Parameter
Value
Unit
R
th (j-c)
Junction to case
Per diode
Total
0.55
0.35
C/W
R
th (c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P (diode 1) x R
th(j-c)
(per diode) + P (diode 2) x R
th(C)
THERMAL RESISTANCES
STTH20003TV
2/5
0
20
40
60
80
100
120
0
20
40
60
80
100
120
P1(W)
= 1
= 0.2
= 0.1
= 0.5
T
=tp/T
tp
= 0.05
IF(av) (A)
Fig. 1: Conduction losses versus average current
(per diode).
1E-3
1E-2
1E-1
1E+0
5E+0
0.0
0.2
0.4
0.6
0.8
1.0
Zth(j-c)/Rth(j-c)
T
=tp/T
tp
= 0.5
= 0.2
= 0.1
Single pulse
tp(s)
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1
10
100
500
IFM(A)
Tj=125
C
(Typical values)
Tj=25
C
Tj=125
C
VFM(V)
Fig. 2: Forward voltage drop versus forward
current (Maximum values, per diode).
0
50
100 150 200 250 300 350 400 450 500
0
5
10
15
20
25
30
35
40
IRM(A)
VR=200V
Tj=125
C
IF=2xIF(av)
IF=IF(av)
IF=0.5xIF(av)
dIF/dt(A/
s)
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence, per diode).
0
50
100 150 200 250 300 350 400 450 500
0
20
40
60
80
100
120
140
160
180
200
220
240
260
trr(ns)
VR=200V
Tj=125
C
IF=2xIF(av)
IF=IF(av)
IF=0.5xIF(av)
dIF/dt(A/
s)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
0
50
100 150 200 250 300 350 400 450 500
0.0
0.1
0.2
0.3
0.4
0.5
0.6
S factor
VR=200V
Tj=125
C
dIF/dt(A/
s)
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values, per diode).
STTH20003TV
3/5
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
IRM
S factor
Tj(
C)
Fig. 7: Relative variation of dynamic parameters
versus
junction
temperature
(Reference:
Tj=125
C).
0
50
100 150 200 250 300 350 400 450 500
0
100
200
300
400
500
600
700
800
900
1000
tfr(ns)
VFR=1.1 xVF max.
IF=IF(av)
Tj=125
C
dIF/dt(A/
s)
Fig.9: Forward recovery time versus dIF/dt (90%
confidence, per diode).
0
50
100 150 200 250 300 350 400 450 500
0
1
2
3
4
5
6
7
8
VFP(V)
IF=IF(av)
Tj=125
C
dIF/dt(A/
s)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence, per diode).
STTH20003TV
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
PACKAGE MECHANICAL DATA
ISOTOP
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
11.80
12.20
0.465
0.480
A1
8.90
9.10
0.350
0.358
B
7.8
8.20
0.307
0.323
C
0.75
0.85
0.030
0.033
C2
1.95
2.05
0.077
0.081
D
37.80
38.20
1.488
1.504
D1
31.50
31.70
1.240
1.248
E
25.15
25.50
0.990
1.004
E1
23.85
24.15
0.939
0.951
E2
24.80 typ.
0.976 typ.
G
14.90
15.10
0.587
0.594
G1
12.60
12.80
0.496
0.504
G2
3.50
4.30
0.138
0.169
F
4.10
4.30
0.161
0.169
F1
4.60
5.00
0.181
0.197
P
4.00
4.30
0.157
0.69
P1
4.00
4.40
0.157
0.173
S
30.10
30.30
1.185
1.193
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH20003TV STTH20003TV
ISOTOP
27g.
without screws
10
with screws
Tube
Epoxy meets UL 94,V0
Cooling method: by conduction (C)
Recommended torque value : 1.3 N.m.
Maximum torque value: 1.5 N.m.
STTH20003TV
5/5
PDF 
ZIP