TARGET SPECIFICATION
Rev 1
November 2005
1/9
9
This is a preliminary information on a new product foreseen to be developed. Details are subject to change without notice
STGW30NC120HD
N-CHANNEL 30A - 1200V - TO-247
VERY FAST PowerMESHTM IGBT
General features
LOW ON-LOSSES
LOW ON-VOLTAGE DROP (V
cesat
)
HIGH CURRENT CAPABILITY
HIGH INPUT IMPEDANCE (VOLTAGE
DRIVEN)
LOW GATE CHARGE
VERY HIGH FREQUENCY OPERATION
LATCH CURRENT FREE OPERATION
Description
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances. The suffix "H"
identifies a family optimized for high frequency
application in order to achieve very high switching
performances (reduced tfall) mantaining a low
voltage drop.
Applications
HIGH FREQUENCY MOTOR CONTROL
U.P.S
WELDING EQUIPMENT
INDUCTION HEATING
Order codes
Internal schematic diagram
Type
V
CES
V
CE(sat)
(Max) @ 25C
I
C
STGW30NC120HD
1200V
< 2.8V
30A
1
2
3
TO-247
Sales Type
Marking
Package
Packaging
STGW30NC120HD
GW30NC120HD
TO-247
TUBE
www.st.com
1 Electrical ratings
STGW30NC120HD
2/9
1 Electrical
ratings
Table 1.
Absolute maximum ratings
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
GS
= 0)
1200
V
I
C
Note
2
Collector Current (continuous) at 25C
60
A
I
C
Note
2
Collector Current (continuous) at 100C
30
A
I
CM
Note
1
Collector Current (pulsed)
120
A
V
GE
Gate-Emitter Voltage
20
V
P
TOT
Total Dissipation at T
C
=25C
200
W
I
f
Diode RMS Forward Current at T
C
=25C
200
T
j
Operating Junction Temperature
55 to 150
C
T
stg
Storage Temperature
Min.
Typ.
Max.
Unit
Rthj-case
Thermal Resistance Junction-case
--
--
0.625
C/W
Rthj-amb
Thermal Resistance Junction-ambient
--
--
50
C/W
STGW30NC120HD
2 Electrical characteristics
3/9
2 Electrical
characteristics
(T
CASE
= 25 C unless otherwise specified)
Table 3.
Static
Table 4.
Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 250A, V
GE
= 0
1200
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
= 15V, I
C
= 20A, Tj= 25C
V
GE
= 15V, I
C
= 20A, Tj= 125C
2.4
2
2.9
V
V
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250A
5
7
V
I
CES
Collector-Emitter Leakage
Current (V
CE
= 0)
V
GE
=Max Rating,Tc=25C
V
GE
=Max Rating, Tc=125C
10
100
A
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20V , V
CE
= 0
100
nA
g
fs
Forward Transconductance
V
CE
= 25V
,
I
C
= 25A
TBD
S
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
TBD
TBD
TBD
pF
pF
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
=960V, I
C
=20A,V
GE
=15V
TBD
TBD
TBD
TBD
nC
nC
nC
2 Electrical characteristics
STGW30NC120HD
4/9
Table 5.
Switching on/off (inductive load)
Table 6.
Switching energy (inductive load)
Table 7.
Collector-emitter diode
(1)Pulse width limited by max junction temperature
(2) Calculated according to the iterative formula:
(3) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a
co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C)
(4) Turn-off losses include also the tail of the collector current
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 3)
TBD
62
TBD
ns
ns
A/s
t
d(on)
t
r
(di/dt)
on
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 3)
TBD
TBD
TBD
ns
ns
A/s
t
r
(V
off
)
t
d
(
off
)
t
f
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 3)
TBD
TBD
TBD
ns
ns
ns
t
r
(V
off
)
t
d
(
off
)
t
f
Cross-over Time
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 3)
TBD
TBD
TBD
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Eon
Note
3
E
off
Note
4
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V, Tj= 25C
(see Figure 3)
TBD
TBD
TBD
J
J
J
Eon
Note
3
E
off
Note
4
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
CC
= 960V, I
C
= 20A
R
G
= 10
, V
GE
= 15V, Tj= 125C
(see Figure 3)
TBD
TBD
TBD
J
J
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
f
Forward On-Voltage
If = 12A
If = 12A, Tj = 125 C
2.4
1.4
2.9
V
V
t
rr
Q
rr
I
rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 12A, V
R
= 27V,
T
j
= 125 C, di/dt = 100A/s
(see Figure 4)
TBD
TBD
TBD
ns
nC
A
I
C
T
C
(
)
T
JMAX
T
C
R
THJ
C
V
C ESAT MAX
(
)
T
C
I
C
,
(
)
--------------------------------------------------------------------------------------------------
=
STGW30NC120HD
3 Test Circuits
5/9
3 Test
Circuits
Figure 1.
Test Circuit for Inductive Load
Switching
Figure 2.
Gate Charge Test Circuit
Figure 3.
Switching Waveform
Figure 4.
Diode Recovery Time Waveform
4 Package mechanical data
STGW30NC120HD
6/9
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
STGW30NC120HD
4 Package mechanical data
7/9
DIM.
mm.
inch
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
0.620
e
5.45
0.214
L
14.20
14.80
0.560
0.582
L1
3.70
4.30
0.14
0.17
L2
18.50
0.728
P
3.55
3.65
0.140
0.143
R
4.50
5.50
0.177
0.216
S
5.50
0.216
TO-247 MECHANICAL DATA
5 Revision History
STGW30NC120HD
8/9
5
Revision History
Date
Revision
Changes
14-Nov-2005
1
Initial release.
STGW30NC120HD
5 Revision History
9/9
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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