STW8NA60
STH8NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
s
TYPICAL R
DS(on)
= 0.92
s
30V GATE TO SOURCE VOLTAGE RATING
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
o
C
s
LOW INTRINSIC CAPACITANCES
s
GATE CHARGE MINIMIZED
s
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
Unit
ST W8NA60
STH8NA60FI
V
DS
Drain-source Voltage (V
GS
= 0)
600
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
600
V
V
GS
G ate-source Volt age
30
V
I
D
Drain Current (continuous) at T
c
= 25
o
C
8
5
A
I
D
Drain Current (continuous) at T
c
= 100
o
C
5.1
3.2
A
I
DM
(
)
Drain Current (pulsed)
32
32
A
P
tot
T otal Dissipat ion at T
c
= 25
o
C
150
60
W
Derating Factor
1.2
0. 48
W /
o
C
V
ISO
I nsulation W ithstand Voltage (DC)
4000
V
T
s tg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW 8NA60
STH8NA60F I
600 V
600 V
<
1
<
1
8 A
5 A
October 1998
TO-247
ISOWATT218
1
2
3
1
2
3
1/10
THERMAL DATA
TO-247
ISOWATT 218
R
thj -case
Thermal Resistance Junction-case
Max
0. 83
2. 08
o
C/W
R
thj -amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
30
0.1
300
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
< 1%)
8
A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
480
mJ
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
A
V
GS
= 0
600
V
I
DSS
Zero Gat e Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rat ing
V
DS
= Max Rat ing
T
c
= 100
o
C
25
250
A
A
I
G SS
Gat e-body Leakage
Current (V
DS
= 0)
V
GS
=
30 V
100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
V
G S(th)
Gat e Threshold Voltage V
DS
= V
GS
I
D
= 250
A
2.25
3
3.75
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V
I
D
= 4 A
0.92
1
I
D(o n)
On State Drain Current
V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
8
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
g
f s
(
)
Forward
Transconductance
V
DS
> I
D(o n)
x R
DS(on )ma x
I
D
= 4 A
4. 5
6.6
S
C
iss
C
os s
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1350
175
45
1690
230
60
pF
pF
pF
STW8NA60-STH8NA60FI
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 300 V
I
D
= 4 A
R
G
= 4.7
V
GS
= 10 V
(see t est circuit, f igure 3)
20
35
28
35
ns
ns
(di/dt)
on
Turn-on Current Slope
V
DD
= 480 V
I
D
= 8 A
R
G
= 47
V
G S
= 10 V
(see t est circuit, figure 5)
200
A/
s
Q
g
Q
gs
Q
gd
Tot al G ate Charge
Gat e-Source Charge
Gat e-Drain Charge
V
DD
= 480 V
I
D
= 8 A
V
G S
= 10 V
58
9
27
82
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
t
r (Voff)
t
f
t
c
Off -volt age Rise T ime
Fall T ime
Cross-over Time
V
DD
= 640 V
I
D
= 8 A
R
G
= 4.7
V
G S
= 10 V
(see t est circuit, f igure 5)
16
16
26
23
23
37
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
8
32
A
A
V
SD
(
)
Forward On Voltage
I
SD
= 8 A
V
GS
= 0
1. 6
V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 8 A
di/dt = 100 A/
s
V
DD
= 100 V
T
j
= 150
o
C
(see t est circuit, f igure 5)
600
10
33
ns
C
A
(
) Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
STW8NA60-STH8NA60FI
3/10
Thermal Impedance for TO-247
Derating Curve for TO-247
Output Characteristics
Thermal Impedance for ISOWATT218
Derating Curve for ISOWATT218
Transfer Characteristics
STW8NA60-STH8NA60FI
4/10
Transconductance
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Static Drain-source On Resistance
Capacitance Variations
Normalized On Resistance vs Temperature
STW8NA60-STH8NA60FI
5/10
Turn-on Current Slope
Cross-over Time
Accidental Overload Area
Turn-off Drain-source Voltage Slope
Switching Safe Operating Area
Source-drain Diode Forward Characteristics
STW8NA60-STH8NA60FI
6/10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STW8NA60-STH8NA60FI
7/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
TO-247 MECHANICAL DATA
STW8NA60-STH8NA60FI
8/10
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.210
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.75
1
0.029
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
0.090
U
4.6
0.181
L1
A
C
D
E
H
G
M
F
L6
1
2
3
U
L5
L4
D1
N
L3
L2
P025C
ISOWATT218 MECHANICAL DATA
STW8NA60-STH8NA60FI
9/10
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
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